Abstract:Multi-barrier nano-thin films device is a new device based on the quantum tunneling effect. This kind of device has piezoresistive effect and the piezoresistive sensitivity is about one order than that of silicon piezoresistive device. Thin film device fabricated by using molecular beam epitaxy (MBE) has the advantages of small temperature drift compared with the doped devices. Comparing with the electrostatic comb-drive mode, the electromagnetic driving approach is not only with simple structure and easy to f… Show more
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