Research of Nanoscale MOSFET Parameters Impact on the Performance of Energy Converters for Internet of Things

Abstract

Wireless microdevices are widely adopted in Radio-frequency Identification (RFID), Wireless Sensor Networks (WSN), Internet of Things (IoT). Among them, passive devices have a special place, since they haven't constant internal power supply. Passive devices are cheaper and more compact than their active analogs, their lifetime is higher, and they can be applied in some applications, which are inappropriate for active tags, e.g. in medical implants. However passive devices have to receive the energy for operation from the outside through RF radiation -from reader or harvesting energy from the environment. For conversion this energy to power supply voltage of passive microdevice IC, voltage rectifiers are used. The purpose of this work is research of impact on output voltage by parameters of nanoscale diode-connected MOSFETs, which perform functions of rectifiers in the energy converters. The comparison of different voltage rectifier configurations was made based on Tanner EDA simulation results. The current-voltage characteristics of diode-connected MOSFETs were obtained for different CMOS technologies. The impact of transistor threshold voltage and its sizes on output voltage of single-stage multiplier for different technologies, input voltage amplitudes and load resistances was investigated. The results of the research can be useful in the design of wireless passive microdevices.