Research of the Monolithic Integrated 3-D Magnetic Field Sensor Based on MEMS Technology

Zhao, Xiaofeng; Bai, Yunjia; Deng, Qi; Ai, Chunpeng; Yang, Xiaojun

doi:10.1109/jsen.2017.2736639

Cited by 18 publications

(22 citation statements)

References 21 publications

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“…Niekiel [9] magnetic-resonance 1−axis Chen [10] giant magneto-impedance 1−axis Okada [11] magnetic-resonance 1−axis Guo [12] fluxgate 1−axis Nejad [13] magnetic-resonance 1−axis Bahreyni [14] magnetic-resonance 1−axis Tseng [15] magnetic-transistor 1−axis Sileo [16] Hall element 3−axis Zhao [17] magnetic-transistor + Hall element 3−axis Yeh [18] magnetic-piezoelectric 3−axis…”

Section: Sensing Principle Typementioning

confidence: 99%

“…The MS sensitivity was 0.03 V/T. A three-axis MS, presented by Zhao [17], was manufactured through the MEMS technology. The MS had four magnetic transistors and a Hall element.…”

Section: Introductionmentioning

confidence: 99%

“…These sensors [9][10][11][12][13][14][15] were one-axis MSs. The sensors [16][17][18] were three-axis MSs. This work develops a three-axis micro MS, in which its sensitivity exceeds that of the sensors [16,17] Table 1.…”

Section: Introductionmentioning

confidence: 99%

“…The sensors [16][17][18] were three-axis MSs. This work develops a three-axis micro MS, in which its sensitivity exceeds that of the sensors [16,17] Table 1. Summary of sensing principle and type for various micro magnetic sensors.…”

Section: Introductionmentioning

confidence: 99%

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Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

Shih

Tsai

et al. 2021

Sensors

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A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y-MSE and an z-MSE, to reduce cross-sensitivity. The x/y-MSE is constructed by an x-MSE and an y-MSE that are respectively employed to detect in the x- and y-direction magnetic field (MF). The z-MSE is used to sense in the z-direction MF. The x/y-MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x-direction MF, 525 mV/T in the y-direction MF and 119 mV/T in the z-axis MF.

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Section: Sensing Principle Typementioning

confidence: 99%

“…The MS sensitivity was 0.03 V/T. A three-axis MS, presented by Zhao [17], was manufactured through the MEMS technology. The MS had four magnetic transistors and a Hall element.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

Shih

Tsai

et al. 2021

Sensors

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“…For instance, magnetic sensitive transistors (MST) are sensitive to the external magnetic field parallel to the sensor chip surface, Hall elements measure the external magnetic field perpendicular to the magnetic sensitive layer [1,2]. In addition, the measurement of multi-directional magnetic field vectors is in high demand in different application fields such as navigation, the automotive industry and deep-sea exploration [3]. To meet the requirements of these applications, space magnetic field vector sensors are assembled and formed by multi same single-axis magnetic field sensors, with a good uniformity of magnetic sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of a Magnetic Field Sensor with a Concentrating-Conducting Magnetic Flux Structure

Zhao

2019

Sensors

Self Cite

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A magnetic field sensor with a new concentrating-conducting magnetic flux structure (CCMFS) is proposed in this paper, using a silicon-on insulator (SOI) Hall element fabricated by complementary metal oxide semiconductor (CMOS) technology as a magnetic sensitive unit. By fixing the CCMFS above the Hall element packaged on a printed circuit board (PCB) based on inner-connect wire bonding technology, a non-magnetized package can subsequently be obtained. To analyze the inner magnetic field vector distribution of the CCMFS, a simulation model was built based on a finite element software, where the CCMFS was processed using Ni-Fe alloys material by a low speed wire-cut electric discharge technology. The test results showed that the measurement of magnetic fields along a sensitive and a non-sensitive axis can be achieved when VDD = 5.0 V at room temperature, with magnetic sensitivities of 122 mV/T and 132 mV/T in a testing range from −30 mT to 30 mT, respectively. This study makes it possible to not only realize the detection of magnetic field, but also to significantly improve the sensitivity of the sensor along a non-sensitive axis.

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On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Zhang

Chen

et al. 2023

Adv Funct Materials

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Electrically integrable, high-sensitivity, and high-reliability magnetic sensors are not yet realized at high temperatures (500 °C). In this study, an integrated on-chip single-crystal diamond (SCD) micro-electromechanical system (MEMS) magnetic transducer is demonstrated by coupling SCD with a large magnetostrictive FeGa film. The FeGa film is multifunctionalized to actuate the resonator, self-sense the external magnetic field, and electrically readout the resonance signal. The on-chip SCD MEMS transducer shows a high sensitivity of 3.2 Hz mT −1 from room temperature to 500 °C and a low noise level of 9.45 nT Hz −1/2 up to 300 °C. The minimum fluctuation of the resonance frequency is 1.9 × 10 −6 at room temperature and 2.3 × 10 −6 at 300 °C. An SCD MEMS resonator array with parallel electric readout is subsequently achieved, thus providing a basis for the development of magnetic image sensors. The present study facilitates the development of highly integrated on-chip MEMS resonator transducers with high performance and high thermal stability.

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Research of the Monolithic Integrated 3-D Magnetic Field Sensor Based on MEMS Technology

Cited by 18 publications

References 21 publications

Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

Manufacturing and Characterization of Three-Axis Magnetic Sensors Using the Standard 180 nm CMOS Technology

Characteristics of a Magnetic Field Sensor with a Concentrating-Conducting Magnetic Flux Structure

On‐chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

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