Research of the SPiN diodes for silicon-based reconfigurable holographic antenna

Su, Housheng; Hu, Huiyong; Shen, Bin; Wang, Bin; Wang, Wei; Wang, Jiaxiang

doi:10.1016/j.sse.2018.05.001

Cited by 7 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In designing of a solid-state plasma S-PIN diode, a critical consideration is whether the carrier concentration within the plasma region can reach 10 18 cm −3 under forward bias voltage. Several simulations and parameter optimizations have been conducted regarding the carrier concentration and I-V characteristics of the S-PIN diode structure [21][22][23][24][25]. Based on the research presented in these studies, it can be conclusively determined that highly resistive floating zone (FZ) silicon wafers are unsuitable for the fabrication of S-PIN diodes.…”

Section: Simulation and Analysis Of S-pin Diodesmentioning

confidence: 99%

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis

Jin,

Zhou,

Lou

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

This article examines the feasibility of integrating solid-state plasma surface p-i-n (S-PIN) diodes into on-chip slots using silicon-on-insulator (SOI) technology. Two categories of solid-state plasma S-PIN diodes are characterized. Simulations analyze the current-voltage (I-V) characteristics, carrier concentrations, potential distribution, and thermal considerations of both single and dual S-PIN diodes, with optimization of their structural parameters and sizes. Experimental tests on fabricated S-PIN diodes of varying sizes with bias lines embedded in the on-chip slots show favorable I-V characteristics for both types of diodes. The measured results closely align with simulation predictions for the diodes' conduction onset voltages. Additionally, a cavity-backed slot antenna (CBSA) is proposed to evaluate and compare radiation characteristics resulting from integrating different types of S-PIN diodes.

show abstract

Section: Simulation and Analysis Of S-pin Diodesmentioning

confidence: 99%

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis

Jin,

Zhou,

Lou

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The reconfigurable properties of plasma antenna mainly depend on the temporary formation of solid-state plasma regions with fairly high electrical conductivity placed at on the surface of the silicon, therefore, the key reconfigurable element is SPiN diode [6].…”

Section: Solid State Plasma Formation Principlementioning

confidence: 99%

A Reconfigurable Solid-state Plasma Dipole Antenna Based on SPiN Diodes

Kang¹,

Hu²,

Han³

2018

dtetr

View full text Add to dashboard Cite

This paper proposed an innovative reconfigurable antenna concept based on the dynamic definition of metal-like conductive plasma in high-resistivity silicon that are activated by the injection of dc current. Based on investigations of the solid-state plasma characteristics, the metallic properties of solid plasma were verified. And a demonstration prototype solid-state plasma frequency reconfigurable antenna containing 36 SPiN diodes was designed, fabricated, and tested. This antenna can work at three different states by turning SPiN diodes on or off selectively, in turn, working at the desired frequency state. The results show that this type of antenna posseses the unique characteristics compared with the conventional one.

show abstract

“…However, the high permittivity of Si substrates lowers antenna performance [ 19 ]. Some other applications of Si based in RF, such as Si-based MEMS reconfigurable antennas and devices, have been reported in [ 20 , 21 ], showing the high potential of the Si technology in RF circuit applications at different frequency bands.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Micromachined Antenna Substrates Operating at 5 GHz for RF Energy Harvesting Applications

et al. 2019

View full text Add to dashboard Cite

This paper investigates micromachined antenna performance operating at 5 GHz for radio frequency (RF) energy harvesting applications by comparing different substrate materials and fabrication modes. The research aims to discover appropriate antenna designs that can be integrated with the rectifier circuit and fabricated in a CMOS (Complementary Metal-Oxide Semiconductor)-compatible process approach. Therefore, the investigation involves the comparison of three different micromachined antenna substrate materials, including micromachined Si surface, micromachined Si bulk with air gaps, and micromachined glass-surface antenna, as well as conventional RT/Duroid-5880 (Rogers Corp., Chandler, AZ, USA)-based antenna as the reference. The characteristics of the antennas have been analysed using CST-MWS (CST MICROWAVE STUDIO®—High Frequency EM Simulation Tool). The results show that the Si-surface micromachined antenna does not meet the parameter requirement for RF antenna specification. However, by creating an air gap on the Si substrate using a micro-electromechanical system (MEMS) process, the antenna performance could be improved. On the other hand, the glass-based antenna presents a good S11 parameter, wide bandwidth, VSWR (Voltage Standing Wave Ratio) ≤ 2, omnidirectional radiation pattern and acceptable maximum gain of >5 dB. The measurement results on the fabricated glass-based antenna show good agreement with the simulation results. The study on the alternative antenna substrates and structures is especially useful for the development of integrated patch antennas for RF energy harvesting systems.

show abstract

Research of the SPiN diodes for silicon-based reconfigurable holographic antenna

Cited by 7 publications

References 16 publications

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis

A Reconfigurable Solid-state Plasma Dipole Antenna Based on SPiN Diodes

Investigation of Micromachined Antenna Substrates Operating at 5 GHz for RF Energy Harvesting Applications

Contact Info

Product

Resources

About