J. Electron. Mater.
 2024
DOI: 10.1007/s11664-024-10968-3
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Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer

Zhichao Chen,
Lie Cai,
Kai Niu
et al.
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