2022
DOI: 10.1088/1742-6596/2248/1/012010
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Research on Degradation Characteristics of GaN-based LD

Abstract: In recent years, GaN-based semiconductor laser diode(LD) have become an ideal light source for laser display, because of their high power and unique luminous wavelength. However, there is a challenge about reliability of GaN-based LD in industrial application. In this paper, an accelerated aging test is conducted on the same group of GaN-based LD at a high current of 4.1A. The degradation rate of GaN-based LD is obtained by least square method. Besides, the optical characteristics and low frequency electrical … Show more

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