Research on Dynamic Characteristics of Trench Type Bidirectional IGBT

Abstract

Abstract. To improve the switching characteristics of conventional structure IGBT, a new trench type bidirectional insulated gate bipolar transistor (IGBT) is proposed. The main feature of this structure is introducing a cell in collector of conventional trench IGBT. The new type IGBT reduce both turn-on and turn-off losses because double-gate IGBT can accelerate carrier extraction speed. By building the device simulation DC/AC circuit of dynamic characteristics, the turn-on time is 0.12μs and turn-off time is 5.1ns. Compared with conventional IGBT, the new type IGBT's turn-on and turn-off loss have a great reduce.