Research on Fast Detection Technology of Dark Current in Ge-Si Detector Array

Abstract

The shortwave infrared Ge-Si photodetector will become the core device of the LiDAR optical receiver. In order to meet the urgent demand for photodetectors in the LiDAR field, we have designed and produced a 32×32 pixel Ge-Si photodetector array proposed and developed to meet the performance requirements of the detector array. A dark current detection system for fast scanning and detecting large-scale Ge-Si detector arrays is proposed and developed to achieve rapid detection of dark current in each pixel of the detector. The system was used to validate the main performance indicators of the detector array we designed, achieving rapid discrimination of array performance and rapid localization of damaged pixels. The scanning test results show that the average dark current of the detector array chip we designed is at the nano ampere level, and the proportion of bad points is less than 1%. The consistency of the array chip is high, which can meet the requirements of light detection at the receiving end of the LiDAR. This work laid the foundation for our subsequent development of a LiDAR prototype system.