Research on femtosecond infrared laser cutting 4H-SiC wafer

Shen, Yanfei; Huang, Yunsong; Li, Yongdu; Zhao, Qingchun; Chen, Chen; Yao, Mingliang

doi:10.1117/12.2602464

Cited by 1 publication

(1 citation statement)

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“…By using micropipe-free seeds or a solution-based growth, the density of micropipe and TSDs can be decreased [112,128]. To reduce the surface defects caused by mechanical processes, some studies point out that femtosecond lasers can be used to improve the efficiency of chemical-mechanical planarization [129] and the cutting quality [67,[130][131][132][133]. Femtosecond laser annealing can also improve the quality of ohmic contact between Ni and SiC and increase the conductivity of the device [134].…”

Section: Impact Of Defects On Devicesmentioning

confidence: 99%

Defect Inspection Techniques in SiC

et al. 2022

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With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

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