Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer

Abstract

The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability. To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers, Si–Si3N4 composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window. Si with a thickness of 100 nm and Si3N4 with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source, respectively. Compared with traditional Si impurity induced quantum well intermixing, this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 °C and annealing time of 10 min. Under this annealing condition, the wavelength of the gain luminescence region basically does not shift to short wavelength, and the surface morphology of the whole epitaxial wafer remains fine after annealing. The application of this process condition can reduce the difficulty of production and save cost, which provides an effective method for upcoming fabrication.

Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser

“…4 that with the decrease of In component concentration, the gain spectrum peaks gradually shift from the initial 915 to 845 nm; that is, the wavelength becomes shorter, and the blue shift occurs. For this reason, to obtain the appropriate NAW blue shift degree, maintain the good crystal quality of the active region, and ensure the optical characteristics of the lattice structure [17] . It is necessary to control the mixing degree of the components, including selecting the appropriate annealing temperature and annealing time, as well as the thickness and properties of the grown SiO 2 dielectric film.…”

Research on the fabrication of high-power semiconductor lasers by impurity-free vacancy disordering

“…The rapid progression of QWI technology has led to the development of various approaches, including rapid thermal annealing, 5 , 6 impurity-induced disordering, 7 , 8 ion implantation-induced disordering, 9 , 10 impurity-free vacancy disordering (IFVD), 11 , 12 laser-induced disordering (LID), 13 and plasma-enhanced quantum well intermixing 14 . Among these, IFVD has gained extensive attention due to its minimal impact on laser device performance, attributed to its absence of impurity introduction.…”