Research on the defect types transformation induced by growth temperature of vertical graphene nanosheets

Position-Induced Controllable Growth of Vertically Oriented Graphene Using Plasma-Enhanced Chemical Vapor Deposition

“…As a three-dimensional material, the spatial structure plays an important role in the properties of VG. For example, Miller et al developed a high-response capacitor based on VG with a “wall-like” structure that can serve as an AC filter; moreover, our previous research demonstrated VG with a “tree-like” structure that exhibits excellent flexibility and durability as an electrode for wearable supercapacitors. , Therefore, massive efforts have been made to control the morphology of VG, both theoretically and experimentally. , The most common way to control the morphology and properties of VG is to control the routine synthesis conditions, such as growth temperature, plasma source power, growth time, precursors, and substrates. ,− However, they can just slightly adjust the basic morphology of VG, like height, density of graphene flakes, size of VG flakes, and so forth. Then, some research induces extra control methods to break the limitation of routine synthesis.…”