Research on the electronic properties of graphene/β-Si3N4 (0001) heterojunction

Contact evaluation of the penta-PdPSe/graphene vdW heterojunction: tuning the Schottky barrier and optical properties

“…4c]. Moreover, van Hove singularities 50 are formed due to the misorientation between PdPSe and graphene layers as in the case with twisted bilayer graphene, 51 graphene/β-Si 3 N. 52…”

“…4c]. Moreover, van Hove singularities 50 are formed due to the misorientation between PdPSe and graphene layers as in the case with twisted bilayer graphene, 51 graphene/ b-Si 3 N. 52 In addition, we have conducted a thorough investigation of band bending within the PdPSe/G heterojunction to assess the lateral barrier within the framework of the current-in-plane (CIP) model. 44 As illustrated in Fig.…”

Controllable Friction on Graphene via Adjustable Interfacial Contact Quality

“…After the tapping process, the binding strength between the graphene and the substrate weakens due to the large adhesion force between the graphene and the Si 3 N 4 , as the binding energy between Si 3 N 4 /graphene is significantly greater than that between SiO 2 /graphene. [ 33 , 34 ] During FFM scanning, the graphene that has undergone tapping exhibits increased deformability compared to the untapped graphene. As a consequence, the contact area between the AFM tip and the tapped graphene is larger than that of the untapped graphene, leading to an increase in the friction force.…”