2024
DOI: 10.1002/admi.202400751
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Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface

Yunqi Yang,
Dongdong Chen,
Di Li
et al.

Abstract: Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the performance of Si‐based devices. However, owing to the impact of the external environment, related defects are generated, and the dopant can diffuse and redistribute, causing a series of parasitic effects that reduce the lifespan of the devices. In this paper, recent investigations on the mechanisms of interface defect initiation and dopant diffusion are systematically reviewed. At the Si/SiO2 interface, Pb‐type center defects… Show more

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