Research on the Metasurface for Single-Photon Avalanche Photodiode

Chen, Linyao; Zhang, Sunhao; Ye, Yuyang; Liu, Chuang; Shi, Yan; Tian, Ying; Xu, Rui; Chen, Yi

doi:10.3389/fphy.2020.585871

Cited by 2 publications

(1 citation statement)

References 32 publications

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“…[1][2][3][4][5] With the continuous development and optimization of image sensing technology, it is possible to manufacture millions of pixels with single-photon detection capability on a single chip. [6] To date, a great deal of research has been conducted to develop SPAD devices with high performance; for example, back-illuminated three-bit stacked SPADs with extremely low tunnel noise and high photon detection probability, [7] SPAD devices with improved photon detection probability by designing antireflection nanostructures, [8] near-infrared enhanced singlephoton detectors, [9,10] et al With the development of semiconductor technology, semiconductor devices face increasing stability and reliability problems, among which capacitance is an important factor affecting the response speed of the device. However, there are few studies on the capacitance characteristics of SPADs at present, and the research directions mainly focus on broadening the spectral response range, improving the photon detection probability, and optimizing the dark count.…”

Section: Introductionmentioning

confidence: 99%

Model and data of optically controlled tunable capacitor in silicon single-photon avalanche diode

et al. 2023

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This paper reports the photocapacitance effect of silicon-based single-photon avalanche diodes (SPADs), and the frequency scattering phenomenon of capacitance. The test results of the small-signal C-V method show that the light can cause the capacitance of the SPAD device to increase under low-frequency conditions, and the photocapacitance exhibits frequency-dependent characteristics. Since the devices are fabricated based on the standard Bipolar-CMOS-DMOS (BCD) process, this study attributes the above results to the interfacial traps formed by Si-SiO2, and the illumination could effectively reduce the interfacial trap lifetime, leading to changing the junction capacitance inside the SPAD. Accordingly, an equivalent circuit model considering the photocapacitance effect is also proposed in this paper. Accurate analysis of the capacitance characteristics of SPAD has important scientific significance and application value for studying the energy level distribution of device interface defect states and improving the interface quality.

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