Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films

Li, Rui; Zhu, Hongtu; Liu, Jie; Wang, Si; Xie, Na; Huang, Zeng; Fang, Zijun

doi:10.1088/1742-6596/1907/1/012020

Cited by 1 publication

(2 citation statements)

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“…Furthermore, leakage resistance measurements show an increase in resistance for electric fields below 2.5 MV/cm with an increasing number of cycles, in addition to a slight change in the voltage dependency (Figure b). Such changes in resistivity during wake-up are attributed to oxygen vacancies moving out of the bulk material toward the electrode interfaces …”

Section: Resultsmentioning

confidence: 99%

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Domain Wall Movement in Undoped Ferroelectric HfO₂: A Rayleigh Analysis

Marquardt

Petersen

Gronenberg

et al. 2023

ACS Appl. Electron. Mater.

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The discovery of ferroelectricity in doped HfO2 in 2011 gave rise to quite a stir in the scientific world that persists up to this day. The complementary metal oxide semiconductor compatibility, as well as good scalability, enables versatile applications ranging from ferroelectric field effect transistors to ferroelectric tunnel junctions and neuromorphic devices. Stabilizing the metastable polar orthorhombic phase with space group Pca21-phase, which is responsible for the ferroelectricity in HfO2, is still challenging. We demonstrate for the first time a sputter deposition of undoped ferroelectric HfO2 on superconducting NbN electrodes, with a remanent polarization of 6.4 μC/cm2. Grazing incident X-ray diffraction on the layer structure, dynamic hysteresis measurements, and electron energy loss spectroscopy on fabricated devices indicate a HfO2 layer with low oxygen deficiency. Furthermore, no evidence of interdiffusion of oxygen or nitrogen at the interfaces is found. A sudden “wake-up” for the transition from the dielectric state to the ferroelectric state as well as no classical fatigue effect for the degradation of the ferroelectric performance are observed. These analyses are extended by an investigation of Rayleigh behavior using impedance spectroscopy. In that way, the domain wall flexibility is quantified and classified within different regimes of the various domain wall motions.

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Section: Resultsmentioning

confidence: 99%

“…Such changes in resistivity during wake-up are attributed to oxygen vacancies moving out of the bulk material toward the electrode interfaces. 55 Rayleigh Analysis: AC Measurements. Theoretical Background.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%