Research opportunities in polycrystalline compound solar cells

Bube, Richard H.; Mitchell, K.W.

doi:10.1007/bf02665720

Cited by 24 publications

(10 citation statements)

References 41 publications

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“…The decrease of the lattice constant gives rise to an increase of the interaction between the wave functions associated to the valence electrons which in turn lead to the broadening of the energy band gap. The values of Eg and its relationship with the lattice constant, found in this work for the ZnS x Se 1Àx , Zn x In 1Àx Se and CdS x Te 1Àx compounds, are in agreement with those reported by other authors [5,14,15].…”

Section: Influence Of the Chemical Composition On The Optical Gapsupporting

confidence: 93%

Structural characterization of thin films based on II–VI ternary compounds deposited by evaporation

Gordillo

Romero

2005

Thin Solid Films

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Section: Influence Of the Chemical Composition On The Optical Gapsupporting

confidence: 93%

Structural characterization of thin films based on II–VI ternary compounds deposited by evaporation

Gordillo

Romero

2005

Thin Solid Films

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“…This is because the material has good manufacturability, high solar energy absorption coefficients, and optimal band gaps for photoelectric conversion under solar radiation. [5][6][7] In the other application, the CdTe-based Cd 1−x Zn x Te (CZT) alloys have long been the dominant semiconducting material utilized in radiation detectors. [8][9][10][11] This is because these alloys have high atomic numbers for efficient radiation-atomic interactions and ideal band gaps for both high electron-hole creation and low leakage current.…”

Section: Introductionmentioning

confidence: 99%

High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

et al. 2012

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CdTe has been a special semiconductor for constructing the lowest-cost solar cells, and the CdTe-based Cd 1−x Zn x Te alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth of CdTe crystals are difficult to explore in experiments. Here, we demonstrate the capability of a bond-order potential-based molecular dynamics method for predicting the crystalline growth of CdTe films during vapor deposition simulations. Such a method may begin to enable defects generated during vapor deposition of CdTe crystals to be accurately explored.

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“…As one example, CdTe is a leading semiconductor for terrestrial solar cell applications 1,2 due to its manufacturability, high solar energy absorption coefficient, and optimal band gap for photoelectric conversion under solar radiation. [3][4][5] Currently, CdTe modules have the lowest cost compared to any other photovoltaic technologies. [6][7][8] As another example, CdTe-based CZT crystals have been the dominant semiconductor compounds for radiation detection applications.…”

Section: Introductionmentioning

confidence: 99%

Analytical bond-order potential for the cadmium telluride binary system

et al. 2012

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CdTe and Cd 1-x Zn x Te are the leading semiconductor compounds for both photovoltaic and radiation detection applications. The performance of these materials is sensitive to the presence of atomic-scale defects in the structures. To enable accurate studies of these defects using modern atomistic simulation technologies, we have developed a high-fidelity analytical bond-order potential for the CdTe system. This potential incorporates primary (σ) and secondary (π) bonding and the valence dependence of the heteroatom interactions. The functional forms of the potential are directly derived from quantum-mechanical tight-binding theory under the condition that the first two and first four levels of the expanded Green's function for the σ-and π-bond orders, respectively, are retained. The potential parameters are optimized using iteration cycles that include first-fitting properties of a variety of elemental and compound configurations (with coordination varying from 1 to 12) including small clusters, bulk lattices, defects, and surfaces, and then checking crystalline growth through vapor deposition simulations. It is demonstrated that this CdTe bond-order potential gives structural and property trends close to those seen in experiments and quantum-mechanical calculations and provides a good description of melting temperature, defect characteristics, and surface reconstructions of the CdTe compound. Most importantly, this potential captures the crystalline growth of the ground-state structures for Cd, Te, and CdTe phases in vapor deposition simulations.

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Research opportunities in polycrystalline compound solar cells

Cited by 24 publications

References 41 publications

Structural characterization of thin films based on II–VI ternary compounds deposited by evaporation

Structural characterization of thin films based on II–VI ternary compounds deposited by evaporation

High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

Analytical bond-order potential for the cadmium telluride binary system

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