Research progress in passivation layer technology for crystalline silicon solar cells

Abstract

Under the background of rapid advancements in photovoltaic technology, crystalline silicon (c-Si) solar cells, as the mainstream photovoltaic devices, have gained significant research attention for their excellent performances. In particular, silicon heterojunction (SHJ) solar cells, TOPCon (Tunnel Oxide Passivated Contact), and PERC (Passivated Emitter and Rear Cell) represent the cutting-edge technologies in c-Si solar cells. The surface passivation layer of crystalline silicon solar cells, as one of the key factors to improve cell performances, has been closely linked to the development of crystalline silicon solar cells. Due to the complex mechanism of passivation layer and the high demand of experimental research, it is challenging to achieve high quality surface passivation. This paper comprehensively reviews the key issues and research progress in interface passivation technologies for SHJ, TOPCon, and PERC solar cells. Firstly, the research progress of key technology breakthrough of SHJ solar cell is reviewed systematically, and the influences of growth conditions and doping layer on the passivation performances of SHJ solar cell are discussed in detail. Secondly, the important strategies and research achievements for improving the passivation performances of TOPCon and PERC solar cells in the past five years are systematically described. Finally, the development trend of passivation layer technology is prospected. This review offers valuable insights for future technological improvements and performance enhancements in c-Si solar cells.