Double perovskite films have been extensively studied
for ferroelectric
order, ferromagnetic order, and photovoltaic effects. The customized
ion combinations and ordered ionic arrangements provide unique opportunities
for bandgap engineering. Here, a synergistic strategy to induce chemical
strain and charge compensation through inequivalent element substitution
is proposed. A-site substitution of the barium ion is used to modify
the chemical valence and defect density of the two B-site elements
in Bi2FeMnO6 double perovskite epitaxial thin
films. We dramatically increased the ferroelectric photovoltaic effect
to ∼135.67 μA/cm2 from 30.62 μA/cm2, which is the highest in ferroelectric thin films with a
thickness of less than 100 nm under white-light LED irradiation. More
importantly, the ferroelectric polarization can effectively improve
the photovoltaic efficiency of more than 5 times. High-resolution
HAADF-STEM, synchrotron-based X-ray diffraction and absorption spectroscopy,
and DFT calculations collectively demonstrate that inequivalent ion
plays a dual role of chemical strain (+1.92 and −1.04 GPa)
and charge balance, thereby introducing lattice distortion effects.
The reduction of the oxygen vacancy density and the competing Jahn–Teller
distortion of the oxygen octahedron are the main phenomena of the
change in electron–orbital hybridization, which also leads
to enhanced ferroelectric polarization values and optical absorption.
The inequivalent strategy can be extended to other double perovskite
systems and applied to other functional materials, such as photocatalysis
for efficient defect control.