Research Update: Preserving the photoluminescence efficiency of near infrared emitting nanocrystals when embedded in a polymer matrix

Abstract

Research Update: Strain and composition effects on ferromagnetism of Mn 0.05 Ge 0.95 quantum dots

Photoluminescence of Lead Sulfide Quantum Dots of Different Sizes in a Nanoporous Silicate Glass Matrix

“…Identification of a suitable matrix to host these QDs remains an open research question and is crucial for the further development of QD-based devices. − Any matrix must provide a homogeneous distribution and controllable density of QDs at a relatively high level, optical transparency, and stability of physicochemical properties. Nanoporous silicate glass matrices (NSM) are very promising materials for QD infiltration because they possess excellent optical transmission over a wide spectral range and high radiation and mechanical resistance.…”

Robust and Bright Photoluminescence from Colloidal Nanocrystal/Al2O3 Composite Films Fabricated by Atomic Layer Deposition

“…Colloidal nanocrystals (NCs) have recently drawn significant interest for applications in light-emitting devices due to their size- and shape-dependent optical and electronic properties, like narrow emission band and ultrahigh photoluminescence (PL) quantum yield (PLQY). − In particular, core–shell structures are an efficient structure to reduce the influence of surface defects and allow for more bright and stable emission. − However, the stability of nanocrystals in thin films is significantly reduced and their degradation caused by device fabrication processing and over time still hinders their use in effective optoelectronic devices. , To overcome this limitation, several methods have been studied, among which embedding the colloidal nanocrystals in a polymer matrix − or coating them with dielectric oxides − revealed promising. Concerning coating of nanocrystal films with dielectric oxides, atomic layer deposition (ALD) has the advantage that the voids present in the thin films constitute suitable sites for the gaseous precursors acting in ALD .…”