Resemblance in gas composition of Ar–N<sub>2</sub>–O<sub>2</sub>plasmas and Ar–NO plasmas

Helden, van Jh Jean-Pierre; Zijlmans, Rab Rens; Schram, DC Daan; Engeln, Rah Richard

doi:10.1088/0963-0252/18/2/025020

Cited by 13 publications

(26 citation statements)

References 47 publications

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“…Recombination probabilities measured in mixtures (e.g., N 2 /O 2 ) are usually different from those observed in pure gases . Moreover in mixtures, recombination between chemically different atoms may take place, as for example production of NO from recombination of O and N on the surface . Chemically different atoms may interact differently with surface active sites which further complicates theoretical description of surface kinetics in gas mixtures.…”

Section: Further Challengesmentioning

confidence: 99%

Deterministic and Monte Carlo methods for simulation of plasma‐surface interactions

Marinov

Teixeira

Guerra

2016

Plasma Processes & Polymers

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Two approaches to the modeling of surface kinetics in reactive plasmas are discussed. Coarse‐grained deterministic models incorporate rate balance equations for coverages of surface active sites. They are computationally effective and can be readily coupled to reactor‐scale plasma simulations. In the kinetic Monte Carlo (KMC) approach, the time evolution of a gas‐lattice system consisting of a large number of particles is described. Although being more demanding computationally, KMC algorithms are exact, allow a straightforward description of distributions of surface reactivity and help bridging the gap between simulations on atomic and macroscopic scales. In this paper, theoretical and practical aspects of deterministic and KMC modeling of plasma‐surface interactions are discussed taking O recombination on silica as a model system.

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Section: Further Challengesmentioning

confidence: 99%

Deterministic and Monte Carlo methods for simulation of plasma‐surface interactions

Marinov

Teixeira

Guerra

2016

Plasma Processes & Polymers

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“…Although dissociation reactions involving two species can occur in the gas phase at the pressures typically employed during plasma ALD, three body reactions in the gas phase are more unlikely and most of the molecule formation will therefore occur at surfaces. 26 The formation of NH 3 will occur according to the net conversion reaction:…”

Section: A101-4 Knoops Et Al: Reaction Mechanics Of Atomic Layer Dmentioning

confidence: 99%

Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Knoops

Langereis

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The reaction mechanisms of plasma-assisted atomic layer deposition (ALD) of TaN x using Ta(NMe 2 ) 5 were studied using quadrupole mass spectrometry (QMS). The fact that molecule dissociation and formation in the plasma have to be considered for such ALD processes was illustrated by the observation of 4% NH 3 in a H 2 -N 2 (1:1) plasma. Using QMS measurements the reaction products during growth of conductive TaN x using a H 2 plasma were determined. During the Ta(NMe 2 ) 5 exposure the reaction product HNMe 2 was detected. The amount of adsorbed Ta(NMe 2 ) 5 and the amount of HNMe 2 released were found to depend on the number of surface groups generated during the plasma step. At the beginning of the plasma exposure step the molecules HNMe 2 , CH 4 , HCN, and C 2 H 2 were measured. After an extended period of plasma exposure, the reaction products CH 4 and C 2 H 2 were still present in the plasma. This change in the composition of the reaction products can be explained by an interplay of aspects including the plasma-surface interaction, the ALD surface reactions, and the reactions of products within the plasma. The species formed in the plasma (e.g., CH x radicals) can re-deposit on the surface and influence to a large extent the TaN x material composition and properties.

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“…The abundances of the other types of molecules (NO, NO 2 and N 2 O) are one to three orders of magnitude lower. Remarkable is the maximum abundance of NO: it is independent of pressure and reaches a fraction of 10 −2 of the total pressure (see also [30]). Contrary to NO, the abundance of N 2 O and NO 2 decreases significantly with an increase of pressure.…”

Section: Mixtures Of N 2 and O 2 Admixed To An Ar Expansionmentioning

confidence: 97%

Experimental study of surface contributions to molecule formation in a recombining N₂/O₂plasma

Zijlmans¹,

Welzel²,

Gabriel³

et al. 2010

J. Phys. D: Appl. Phys.

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Abstract. A low pressure recombining Ar plasma to which mixtures of N 2 and O 2 were added has been studied to explore the relevance of surface related processes for the total chemistry. The abundances of the stable molecules N 2 , O 2 , NO, N 2 O and NO 2 have been measured by means of a combination of infrared tunable diode laser absorption spectroscopy and mass spectrometry.A gas phase chemical kinetics model was developed in chemkin to investigate the contribution of homogeneous interactions to the conversion of the feedstock gases N 2 and O 2 . At a partial pressure of N 2 plus O 2 less than 8 Pa, significant discrepancies between measured and calculated concentrations of N 2 O and NO 2 were observed, indicating that heterogeneous processes are dominating the chemistry in this pressure range. At a partial pressure of N 2 plus O 2 higher than 40 Pa and a relatively high fraction of admixed O 2 we observed a fair agreement between measured and calculated concentrations of NO molecules, indicating that homogeneous processes (notably Natom induced) are more dominant than heterogeneous processes.

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Resemblance in gas composition of Ar–N₂–O₂plasmas and Ar–NO plasmas

Cited by 13 publications

References 47 publications

Deterministic and Monte Carlo methods for simulation of plasma‐surface interactions

Deterministic and Monte Carlo methods for simulation of plasma‐surface interactions

Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Experimental study of surface contributions to molecule formation in a recombining N₂/O₂plasma

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Resemblance in gas composition of Ar–N2–O2plasmas and Ar–NO plasmas

Cited by 13 publications

References 47 publications

Deterministic and Monte Carlo methods for simulation of plasma‐surface interactions

Deterministic and Monte Carlo methods for simulation of plasma‐surface interactions

Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

Experimental study of surface contributions to molecule formation in a recombining N2/O2plasma

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Resemblance in gas composition of Ar–N₂–O₂plasmas and Ar–NO plasmas

Experimental study of surface contributions to molecule formation in a recombining N₂/O₂plasma