Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering
Atif Jan,
Stephanie A. Fraser,
Taehwan Moon
et al.
Abstract:Ferroelectric HfO2‐based films incorporated in nonvolatile memory devices offer a low‐energy, high‐speed alternative to conventional memory systems. Oxygen vacancies have been rigorously cited in literature to be pivotal in stabilizing the polar noncentrosymmetric phase responsible for ferroelectricity in HfO2‐based films. Thus, the ability to regulate and control oxygen vacancy migration in operando in such materials would potentially offer step changing new functionalities, tunable electrical properties, and… Show more
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