Reshaping of Single-Crystal Silicon Microstructures

Yang, Eui–Hyeok; Fujita, Hiroyuki

doi:10.1143/jjap.38.1580

Cited by 10 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The maximum average temperature along the microbeams was kept around 700 • C to prevent any failure or recrystallization. In addition, in the range of the actuation temperature, contrary to the results reported in [27], no obvious plastic deformation occurred in the SCS microstructure. In terms of the tested micro-fabricated samples, the factors from residual stresses of the multilayers or variations of the cross section of the beam can be ignored [28][29][30], attributual to the SCS structural devices and a well-controlled fabrication technique.…”

Section: Resultscontrasting

confidence: 85%

The influences of transverse loads on electrothermal post-buckling microbeams

Chen

Zheng

et al. 2011

J. Micromech. Microeng.

View full text Add to dashboard Cite

We report on a nonlinear equation-based closed-form solution for a spring-loading-enclosed electrothermal post-buckling microbeam that expresses (a) the relation between the compressive loads and its corresponding lateral deflections and (b) the threshold loads required to trigger the buckling phenomenon, under the condition of a variety of transverse loads. Our theoretical research reveals that the post-buckling behavior varies considerably under different transverse load ranges. Three types of double-clamped microbeams connected to microsprings with different dimensions and compliances representing transverse loads were fabricated and measured using microelectromechanical systems (MEMS) technology. Excellent agreement was found between our theoretical analysis and experimental results to confirm our exact solutions. It proves that the influences on thermal post-buckling behavior are dependent on different microbeam dimensions and microspring compliances (i.e., transverse loads). Therefore, an electrothermal buckling/post-buckling beam under external transverse loads can be accurately predicted using our theoretical model, which can be applied to either existing microdevices that are based on similar principles or other potential applications.

show abstract

Section: Resultscontrasting

confidence: 85%

The influences of transverse loads on electrothermal post-buckling microbeams

Chen

Zheng

et al. 2011

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…where σ is the stress, E is the Young's modulus, d is the thickness and R is the radius of curvature. For single-crystal Si, E is 190 GPa [17]. Then, for a 5 μm thick membrane with a 3 mm radius of curvature, the stress is 0.158 GPa.…”

Section: Resultsmentioning

confidence: 99%

The fabrication and characterization of organic light-emitting diodes using transparent single-crystal Si membranes

Lee¹,

Kim²,

Kim³

et al. 2009

Nanotechnology

View full text Add to dashboard Cite

For applications such as solar cells and displays, transparent single-crystal Si membranes were fabricated on a silicon-on-insulator (SOI) wafer. The SOI wafer included a buried layer of SiO2 and Si3N4 as an etch-stop layer. The etch-stop layer enabled fabrication of transparent single-crystal Si membranes with various thicknesses, and the thinning technology is described. For membranes with thicknesses of 18, 72 and 5000 nm, the respective optical transparent were 96.9%, 93.7% and 9% for R (red, lambda = 660 nm), 96.9%, 91.4% and 1% for G (green, lambda = 525 nm), and 97.0%, 93.2% and 0% for B (blue, lambda = 470 nm). Organic light-emitting diodes (OLEDs) were then fabricated on transparent single-crystal Si membranes with various top Si thicknesses. OLEDs fabricated on 18, 72 and 5000 nm thick membranes and operated at 6 V demonstrated a luminance of 1350, 443 and 27 cd m(-2) at the current densities of 148, 131 and 1.5 mA cm(-2), respectively.

show abstract

“…Several works have been reported describing resistive heating for the fabrication of microstructures. 16) The temperature estimation during resistive heating and the resultant material characterization will be reported. Figure 1 shows a flow of the multistep pyrolysis with a suspended pyrolyzed polymer microstructure.…”

Section: Introductionmentioning

confidence: 99%

Local Self-Heating of Pyrolyzed Polymer Microstructure for Further Carbonization at Higher Temperature on Silicon Chip

Naka

Okamoto

Konishi

2008

jjap

View full text Add to dashboard Cite

In this paper, we present the local self-heating of a pyrolyzed polymer microstructure on a silicon substrate by resistive heating for further carbonization at higher temperature. It becomes difficult to pyrolyze polymers on substrates above 1100 C because the substrates or other materials are thermally damaged. In order to address this restriction, we propose a multistep pyrolysis. A patterned polymer structure is converted to a conductive pyrolyzed polymer by a furnace process at low temperature. The pyrolyzed polymer structure carbonizes itself by resistive heating as the final process. We have successfully demonstrated the proposed method. The obtained material was characterized by electrical resistance measurement and Raman microspectroscopy.

show abstract

Reshaping of Single-Crystal Silicon Microstructures

Cited by 10 publications

References 16 publications

The influences of transverse loads on electrothermal post-buckling microbeams

The influences of transverse loads on electrothermal post-buckling microbeams

The fabrication and characterization of organic light-emitting diodes using transparent single-crystal Si membranes

Local Self-Heating of Pyrolyzed Polymer Microstructure for Further Carbonization at Higher Temperature on Silicon Chip

Contact Info

Product

Resources

About