2008
DOI: 10.1002/adma.200701659
|View full text |Cite
|
Sign up to set email alerts
|

Residual Layer Self‐Removal in Imprint Lithography

Abstract: A new method for imprinting residual‐layer free polymer micro‐ and nano structures, particularly 3‐D structures with overhang, is demonstrated. This simple and versatile method induces self‐removal of the residual layer by controlled failure of the patterned film along the edges of the imprinted features. Pristine overhang structures down to ∼500 nm diameter are realized without exposure to plasma or chemical etchants.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
16
0

Year Published

2009
2009
2022
2022

Publication Types

Select...
5
2
1

Relationship

0
8

Authors

Journals

citations
Cited by 18 publications
(16 citation statements)
references
References 27 publications
0
16
0
Order By: Relevance
“…Imprint methods were first envisioned as a high-resolution, low-cost alternative to traditional photolithograpic techniques for micro- and nanoscale pattern replication rather than fabrication of distinct particles. Particle fabrication has been a challenge due in large part to the persistent formation of a residual layer of molded material, called a flash layer, which connects the potential particles 62. Much attention has been directed towards the removal or avoidance of this flash layer with the goal of particle fabrication.…”
Section: Imprint Lithography Methodsmentioning
confidence: 99%
“…Imprint methods were first envisioned as a high-resolution, low-cost alternative to traditional photolithograpic techniques for micro- and nanoscale pattern replication rather than fabrication of distinct particles. Particle fabrication has been a challenge due in large part to the persistent formation of a residual layer of molded material, called a flash layer, which connects the potential particles 62. Much attention has been directed towards the removal or avoidance of this flash layer with the goal of particle fabrication.…”
Section: Imprint Lithography Methodsmentioning
confidence: 99%
“…First of all, perfluoropolyether (PFPE) elastomers have a lower surface energy, which enables the selective filling of nanoscale cavities in the mold using any organic liquid-without wetting the land area around the cavities-which enables distinct objects or particles to be formed at the micro-and nanoscales without the formation of the interconnecting 'flash layer', which is noted as a major hurdle in traditional imprint lithography. 68 Secondly, organic liquids and sol-gel metal oxide precursors do not swell fluoropolymers like they do silicones, so one can make PRINT particles and particle arrays having a wide range of attributes (surface chemistries, degradation characteristics, deformability). Thirdly, the Teflon-like characteristics of the fluoropolymer mold allows the resultant organic particles to be easily harvested or removed from the mold.…”
Section: Top-down Methods For Shape-specific Particle Fabricationmentioning
confidence: 99%
“…PRINT is unique over the imprint lithography techniques promulgated by Whitesides et al in that PRINT uses elastomeric fluoropolymers instead of silicones, which results in three distinct features not possible with silicones. First of all, perfluoropolyether (PFPE) elastomers have a lower surface energy, which enables the selective filling of nanoscale cavities in the mold using any organic liquid— without wetting the land area around the cavities—which enables distinct objects or particles to be formed at the micro‐ and nanoscales without the formation of the interconnecting ‘flash layer’, which is noted as a major hurdle in traditional imprint lithography 68. Secondly, organic liquids and sol–gel metal oxide precursors do not swell fluoropolymers like they do silicones, so one can make PRINT particles and particle arrays having a wide range of attributes (surface chemistries, degradation characteristics, deformability).…”
Section: Particle Size and Shape Effectsmentioning
confidence: 99%
“…Dumond and low developed a method of imprinting resist structures wherein the residual layer is self-removed via failure while desirable resist features are transferred to an external substrate. The uniqueness of this technique is further enhanced by the relative ease with which it can be used to fabricate overhang structures useful for shadowing evaporated materials (Dumond & Low, 2008). Balla et al, discussed the relationship between the residual layer and initial resist thickness.…”
Section: 4mentioning
confidence: 99%