2020
DOI: 10.1109/jsen.2020.2997292
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Residual Offset in Silicon Hall-Effect Sensor: Analytical Formula, Stress Effects, and Implications for Octagonal Hall Plate Geometry

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Cited by 9 publications
(2 citation statements)
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“…Therefore, the MFs due to all current elements have the same direction at point P. Accordingly, the stated cross-multiplication becomes equal to Sinθdl. From another side, the distance r from d → l to P can be calculated by means of the Pythagoras theorem as expressed in (3), where in (4) presented it is the relationship between r and θ.…”
Section: Mathematical Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…Therefore, the MFs due to all current elements have the same direction at point P. Accordingly, the stated cross-multiplication becomes equal to Sinθdl. From another side, the distance r from d → l to P can be calculated by means of the Pythagoras theorem as expressed in (3), where in (4) presented it is the relationship between r and θ.…”
Section: Mathematical Modelmentioning
confidence: 99%
“…Hall effect sensors [3]: the generation of a voltage across a conductor when subjected to an MF represents the Hall effect. Hall sensors mainly consist of a thin semiconductor plate.…”
mentioning
confidence: 99%