Residual Strain in the AlN Layers Deposited by Reactive-Gas Pulsed Sputtering Deposition

Choi, Junseck; Ko, Dong Wan; Cho, Sung Min; Tae, Lee Sang; Chang, J.

doi:10.1007/s42341-020-00204-0

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…Sapphire is widely used as a substrate of choice for AlN epitaxial growth because of its easy availability and low cost. AlN films have been grown by various methods [ 14 , 15 , 16 , 17 , 18 , 19 , 20 ], such as chemical vapor deposition (CVD), pulsed sputter deposition (PSD), pulsed laser deposition (PLD), molecular beam epitaxy (MBE), reactive magnetron sputtering, hydride vapor phase epitaxy (HVPE), and metal organic chemical vapor deposition (MOCVD). CVD is found to be the most suitable technique in controlling the preferred orientation [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

“…The AlN crystal planes oriented parallel to the substrates can change with increasing total gas pressure and decreasing deposition temperature due to supersaturation in the gas phase [ 14 ]. The PSD technique is useful for the growth of high-quality AlN films at room temperature, however, the AlN films obtained by this technique exhibit considerable residual compressive strain [ 15 ]. PLD as a deposition method, contains molten small particles or target fragments in the deposited films, which greatly reduces the quality of the films [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

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Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

et al. 2021

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AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values. The biaxial stress decreases from 1.59 to 0.60 GPa for AlN on CSS and from 0.90 to 0.38 GPa for AlN on NPSS sample in the temperature range 80–300 K, which shows compressive stress. According to the TEM data, the stress varies from tensile on the interface to compressive on the surface. It can be deduced that the nano-holes provide more channels for stress relaxation. Nano-patterning leads to a lower degree of disorder and stress/strain relaxes by the formation of the nano-hole structure between the interface of AlN epilayers and the substrate. The low crystal disorder and defects in the AlN on NPSS is confirmed by the small Urbach energy values. The variation in bandgap (Eg) and optical constants (n, k) with temperature are discussed in detail. Nano-patterning leads to poor light transmission due to light scattering, coupling, and trapping in nano-holes.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

et al. 2021

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Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C)

Yusuf,

Md Taib,

Azmi

et al. 2023

Micro and Nanostructures

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Development of a flux-film-coated sputtering (FFC-sputtering) method for fabricating c-axis oriented AlN film

et al. 2020

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In this study, we developed a novel growth method named “Flux-Film-Coated (FFC) sputtering.” In this method, nitrogen radicals were supplied to the Al–Sn flux at around 600 °C followed by the deposition of an Al–Sn metal film on a sapphire substrate as flux, which resulted in the growth of high-quality AlN films. The nitrogen radical, which is the source of nitrogen for the growth of AlN, was generated by the radio frequency plasma in a nitrogen atmosphere. Using a zirconia target in the plasma generation process, nitrogen radicals were easily generated because the zirconia was not etched in a pure nitrogen atmosphere, which enabled us to fabricate the AlN film using the flux method in the sputtering chamber in a single step. The crystallinity of the synthesized AlN determined using the FFC-sputtering method was remarkably improved when compared with that of the AlN film deposited using the reactive sputtering method.

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Residual Strain in the AlN Layers Deposited by Reactive-Gas Pulsed Sputtering Deposition

Cited by 3 publications

References 19 publications

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C)

Development of a flux-film-coated sputtering (FFC-sputtering) method for fabricating c-axis oriented AlN film

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