Residual stress in Si nanocrystals embedded in a SiO2 matrix

Arguirov, T.; Mchedlidze, Teimuraz; Kittler, M.; Rölver, R.; Berghoff, B.; Först, Michael; Spangenberg, Bernd

doi:10.1063/1.2260825

Cited by 69 publications

(78 citation statements)

References 16 publications

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“…66 In 2006, Arguirov et al reported the formation of BC8 Si NPs within amorphous Si in a-Si/SiO 2 multilayer stacks. 69 In addition, Smith et al 8 showed that R8 and BC8 NPs are formed when "black silicon" is produced by irradiating highly doped Si surfaces with femtosecond laser pulses. The authors argued that pressure waves generated by the fspulses first amorphized regions of the sample and then induced the nucleation of R8 and BC8 NPs within these regions.…”

Section: B Embedded Si Nanoparticlesmentioning

confidence: 99%

Novel silicon phases and nanostructures for solar energy conversion

Wippermann

Vörös

et al. 2016

Applied Physics Reviews

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Silicon exhibits a large variety of different bulk phases, allotropes, and composite structures, such as, e.g., clathrates or nanostructures, at both higher and lower densities compared with diamond-like Si-I. New Si structures continue to be discovered. These novel forms of Si offer exciting prospects to create Si based materials, which are non-toxic and earth-abundant, with properties tailored precisely towards specific applications. We illustrate how such novel Si based materials either in the bulk or as nanostructures may be used to significantly improve the efficiency of solar energy conversion devices.

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Section: B Embedded Si Nanoparticlesmentioning

confidence: 99%

Novel silicon phases and nanostructures for solar energy conversion

Wippermann

Vörös

et al. 2016

Applied Physics Reviews

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“…Silicon nanocrystals are frequently characterized by means of Raman spectroscopy that provides very detailed information on their crystal structure [8][9][10][11]. For bulk Si, triply degenerate (T 2g ) first-order optical phonon at the Brillouin-zone centre is observed at 521 cm -1 .…”

Section: Introductionmentioning

confidence: 99%

Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix

Nikolenko¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Influence of combined size confinement effect and effect of local laser heating on the first-order Raman spectrum of silicon nanocrystals embedded into SiO x matrix has been studied. Increase of the local temperature of Si nanocrystals caused by laser illumination with the power density up to 10 mW/m 2 was estimated from the ratio of the Stokes/anti-Stokes peak intensities. Almost linear dependence of nanocrystals local temperature on the power density of exciting radiation with a rate of 63.6 Km 2 /mW has been found. The phonon line shape at power densities, when no laser heating effect is registered, was shown to be described well within the correlation length model of phonon confinement of Si nanocrystals with the size L = 9.2 nm. Observed phonon softening and broadening with increase of the exciting power density is considered as temperatureinduced vibration anharmonicity with the decay of optical phonons through three-and four-phonon processes and corresponding anharmonic constants have been determined.

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“…While complete transformation of DC-Si to β-Sn-Si (and thereby BC8) requires pressures in excess of 10 GPa, recent studies indicate that chemical pathways involving sodium can reduce the formation pressure to as low as 7 GPa without the formation of β-Sn-Si [14]. In addition, an ambient-pressure colloidal synthesis route for BC8-Si nanoparticles was recently reported [15], which may serve useful for solar energy conversion applications with multiple exciton generation [16,17].…”

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confidence: 99%