Residual stresses and clamped thermal expansion in LiNbO<sub>3</sub> and LiTaO<sub>3</sub> thin films

Bartasyte, Ausrine; Plaušinaitienė, Valentina; Abrutis, A.; Murauskas, Tomas; Boulet, Pascal; Margueron, Samuel; Gleize, Jérôme; Robert, S.; Kubilius, V.; Šaltytė, Z.

doi:10.1063/1.4752448

Cited by 27 publications

(26 citation statements)

References 20 publications

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“…Indeed, when the LiNbO 3 film is clamped onto a silicon substrate, its inplane thermal expansion is strongly constrained by the in-plane thermal expansion of the substrate, hence strongly decreasing it since lithium niobate has an expansion twice (along its Z axis) or six times (along its X and Y cristallographic directions) larger than silicon. As demonstrated in [27], clamping also Fig. 6.…”

Section: A Linbo 3 Thin-films For Saw Applicationsmentioning

confidence: 86%

Acoustic filters based on thin single crystal LiNbO<inf>3</inf> films: Status and prospects

Reinhardt

Benaissa

David

et al. 2014

2014 IEEE International Ultrasonics Symposium

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Lithium niobate has been extensively used in the Surface Acoustic Wave (SAW) industry for its excellent piezoelectric properties. In the last twelve years, the interest has been raised towards making this material available in the thin film form for SAW or Bulk Acoustic Wave (BAW) applications, and even for Lamb wave devices. This paper reviews both deposition or thin film transfer techniques to obtain lithium niobate thin films. It also gives a brief overview of the applications of these thin films. Finally, we open new perspectives for this technology with the emerging field of tunable acoustic filters, which need extremely large piezoelectric properties to demonstrate satisfying performance.

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Section: A Linbo 3 Thin-films For Saw Applicationsmentioning

confidence: 86%

Acoustic filters based on thin single crystal LiNbO<inf>3</inf> films: Status and prospects

Reinhardt

Benaissa

David

et al. 2014

2014 IEEE International Ultrasonics Symposium

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“…Thus, it is essential to use methods complementary to XRD, such as Raman spectroscopy, which is a very sensitive and fast technique for the detection of the parasitic phases with different symmetries . In the case of LN and LT films and crystals, Raman scattering is used as a nondestructive, local, and fast probe for strain, Li nonstoichiometry and LiNbO 3 phase purity . Additional Raman modes to the LN Raman signature have been observed in thin film spectra and they were interpreted as defect modes, mainly related to the Li deficiency .…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

“…The refractive indices seem to be more affected by the film structure and texture quality than by the Li nonstoichiometry . Several papers report on Li content within the film estimated from lattice parameters, Curie temperature, or Raman mode damping, but they do not take into account the strain which may affect these properties as well. The effect of the Li deficiency on the lattice parameters is negligible with respect to that of residual stresses in epitaxial LN/LT films .…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

“…Thus, XRD data can be used for the estimation of the residual stresses with reasonable accuracy without taking into account the effect of Li composition on the films but is not recommended for compositional analysis of films. The effects of residual stress and Li deficiency were decoupled in the analysis of the nonstoichiometric LN/LT films by combining Raman spectroscopy and XRD analysis, and by doing calibrations of uniaxial stress and nonstoichiometry effects on the Raman mode damping and wavenumbers . An accuracy in Li 2 O concentration of 0.1–0.2 mol% can be achieved by this method if the local standard of congruent LN/LT crystal is used to calibrate the Raman measurements and if the crystalline quality of the films is very good …”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

“…Organometallic precursors of Li have a low vapor pressure . Several different modifications of conventional MOCVD have been used to grow LN and LT films: solid source flash evaporation, pulsed‐injection MOCVD, spray MOCVD, combinatorial high‐vacuum CVD, pyrosol atmospheric pressure MOCVD, and thermal plasma spray CVD . For PI, liquid injection, or spray MOCVD, the vapor phase is generated by the flash evaporation of a solution containing a mixture of metal–organic precursors.…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

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Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

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Preparation of Heteroleptic Tin(IV) N,O‐β‐Heteroarylalkenolate Complexes and Their Properties as PI‐MOCVD Precursors for SnO₂ Deposition

et al. 2018

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We have successfully prepared and structurally characterized five novel tin(IV) heteroleptic N,O--heteroarylalkenolates containing -CF 3 groups. The synthetic route used reactions of Sn(OtBu) 4 with 3,3,3-trifluoro(pyridin-2-yl)propen-2-ol (PyTFPH), 3,3,3-trifluoro(dimethyl-1,3-oxazol-2-yl)propen-2-ol (DMOTFPH), and 3,3,3-trifluoro(1,3-benzthiazol-2-yl)propen-2-ol (BTTFPH) in dry aprotic solvents leading to elimination of tert-butanol and formation of Sn(OtBu) 2 (PyTFP) 2 (1), Sn(OtBu) 2 (DMOTFP) 2 (2), and Sn(OtBu) 2 (BTTFP) 2 (3). The chelating ligands employed a bidentate N∩O donor set. The reactivity of OtBu groups in the obtained Sn(OtBu) 2 (N∩O) 2 complexes was further investigated in reactions with fluorinated alcohols, 2,2,2-trifluoroethanol (TFEH) and 1,1,1,3,3,3-hexafluoro-2-propanol (HFPH). Two complexes Sn(TFE) 2 (DMOTFP) 2 (4) and [a]

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Residual stresses and clamped thermal expansion in LiNbO₃ and LiTaO₃ thin films

Cited by 27 publications

References 20 publications

Acoustic filters based on thin single crystal LiNbO<inf>3</inf> films: Status and prospects

Acoustic filters based on thin single crystal LiNbO<inf>3</inf> films: Status and prospects

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Preparation of Heteroleptic Tin(IV) N,O‐β‐Heteroarylalkenolate Complexes and Their Properties as PI‐MOCVD Precursors for SnO₂ Deposition

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Residual stresses and clamped thermal expansion in LiNbO3 and LiTaO3 thin films

Cited by 27 publications

References 20 publications

Acoustic filters based on thin single crystal LiNbO<inf>3</inf> films: Status and prospects

Acoustic filters based on thin single crystal LiNbO<inf>3</inf> films: Status and prospects

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

Preparation of Heteroleptic Tin(IV) N,O‐β‐Heteroarylalkenolate Complexes and Their Properties as PI‐MOCVD Precursors for SnO2 Deposition

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Product

Resources

About

Residual stresses and clamped thermal expansion in LiNbO₃ and LiTaO₃ thin films

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Preparation of Heteroleptic Tin(IV) N,O‐β‐Heteroarylalkenolate Complexes and Their Properties as PI‐MOCVD Precursors for SnO₂ Deposition