Resist debris formation and proximity exposure effect in electron beam lithography

Deshmukh, P. R.; Rangra, Kamaljit; Wadhawan, O. P.

doi:10.1116/1.591289

Cited by 1 publication

(1 citation statement)

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“…[1][2][3] Whenever the electron beam exposed patterns are underexposed or underdeveloped such RD formation occurs that is confined within the pattern boundaries. [1][2][3] Whenever the electron beam exposed patterns are underexposed or underdeveloped such RD formation occurs that is confined within the pattern boundaries.…”

Section: Introductionmentioning

confidence: 99%

Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography

Deshmukh

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Erratum: "Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography" [J.Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography J.The phenomenon of resist debris ͑RD͒ formation is shown to be a useful method for proximity exposure ͑PE͒ effect analysis in electron beam lithography. Some simulation results and corresponding experimental results discussed in this article on RD formation over the electron beam exposed pattern areas before and after PE effect correction reveal certain unique features associated with the method. These unique features of the method have direct relevance with the electron beam exposure parameters assumed in the simulation work, their implementation during the experiments, pattern shape-spacing fidelity, and also the correction scheme used for the PE effect correction.

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