Resist degradation under plasma exposure: Synergistic effects of ion bombardment

Joubert, O.; Fiori, C.; Oberlin, J.C.; Paniez, Patrick Jean; Pelletier, Jacques; Pons, M.; Vachette, Thierry G.; Weill, A.

doi:10.1063/1.347214

Cited by 29 publications

(21 citation statements)

References 11 publications

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“…The resist was etched in a distributed electron cyclotron resonance ͑DECR͒ etcher using O 2 , SF 6 , and Ar plasmas. 13,14 In contrast to polyimide, the degradation was not confined to the surface but extended into the bulk.…”

Section: A Analysis Of the Resist Degradation Phenomenon Occurring Dmentioning

confidence: 76%

“…The surface degradation of the resist and its thermal extension into the bulk can be avoided if the carbonaceous graphitized layer, induced by ion bombardment, is stripped by the chemically active species in the plasma as it forms. 14 We have shown in Sec. IV that a C 1s transition associated with graphite ͑283.8 eV͒ was observed in the C 1s XPS spectra of the resist mask on top of the contact holes.…”

Section: A Analysis Of the Resist Degradation Phenomenon Occurring Dmentioning

confidence: 95%

“…In oxygen or fluorine based plasmas, the degradation phenomenon has also been observed. 13,14 On the other hand, in reactive plasmas, the degradation results from the competition between the formation ͑due to ion bombardment͒ and etching of the graphitized film ͑by reactive species͒. The surface degradation of the resist and its thermal extension into the bulk can be avoided if the carbonaceous graphitized layer, induced by ion bombardment, is stripped by the chemically active species in the plasma as it forms.…”

Section: A Analysis Of the Resist Degradation Phenomenon Occurring Dmentioning

confidence: 98%

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Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source

Joubert¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High aspect ratio sub-half-micron contacts were etched in SiO2 using a high density C2F6 plasma generated by an inductively coupled, low pressure reactor. Process development studies have shown that high aspect ratio contact holes can be open in thick dielectric layers with a good selectivity to the underlying silicon. Minimization of reactive ion etching lag is obtained by using high bias power conditions, which on the other hand induce a degradation of the photoresist, described as a graphitization of the resist. The degradation induces considerable roughness at the edges of the resist structures which leads to the creation of striations in the silicon dioxide as the pattern transfer in the SiO2 proceeds. X-ray photoelectron spectroscopy (XPS) studies have allowed analysis of high aspect ratio SiO2 contact holes. Using appropriate flood gun conditions, a complete separation of the XPS peaks originating from the resist mask and from the fluorocarbon polymer deposited on the bottom of the contact holes is possible. The XPS analyses show, in particular, that the fluorination of the polymers on the bottom of the contact holes strongly increases with the aspect ratio of the contact hole, and that the fluorination of the polymers deposited on the contact hole sidewalls is even greater.

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Section: A Analysis Of the Resist Degradation Phenomenon Occurring Dmentioning

confidence: 76%

Section: A Analysis Of the Resist Degradation Phenomenon Occurring Dmentioning

confidence: 95%

Section: A Analysis Of the Resist Degradation Phenomenon Occurring Dmentioning

confidence: 98%

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Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source

Joubert¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Further depth modification from 10 to 100 nm can only be caused by the latter two mechanisms. These mechanisms will be present even when the polymer is at the anode (as in this case) and may cause polymer scissioning [36], affect the cross-linking [37], [38], and hence crystallinity in the polymer. They can also cause the formation of a liquidlike layer in the polymer, which will cause broadening and weakening of the glass transition [39], as seen here.…”

Section: Discussionmentioning

confidence: 99%

Dielectric Response of Tantalum Oxide Deposited on Polyethylene Terephthalate (PET) Film by Low-Temperature Pulsed-DC Sputtering for Wound Capacitors

Sethi

Sahul

Min

et al. 2009

IEEE Trans. Comp. Packag. Technol.

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Deposition of high-k tantalum oxide thin films on thin polymer substrates was investigated, using lowtemperature (−100°C) pulsed-dc reactive sputtering. Degradation of two different polymers, polyethylene terephthalate (PET) and polypropylene (PP), were studied as a function of sputtering conditions. Two different deposition configurations have been explored for polymer films with aluminum electrode on one side. In one configuration, tantalum oxide was deposited on the nonelectroded side of the polymer, while in the other the deposition was on the electroded side of the polymer. The two fabricated structures have been characterized for dielectric permittivity, loss, and ac conductivity as a function of frequency and temperature. Sputtering tantalum oxide on the nonelectroded side of PET substrates results in a 37% higher permittivity for PET than the series model prediction of permittivity. Higher dielectric loss and ac conductivity accompany the higher permittivity. The α bulk relaxation in PET moves to slightly higher temperatures, indicating that there is an increase in the crystallinity of the bulk polymer. This observation is supported by the broader glass transition and an additional endothermic peak around 200°C in PET/Ta 2 O 5 compared to neat PET. In addition, modifications of the space charge activation energy in PET from 1.35 eV to 1.82 eV and of dc conductivity in PET from 6×10 −15 S/m to 4×10 −14 S/m is observed. Sputtering Ta 2 O 5 on the electroded side of the PET, under the same sputtering conditions, results in the formation of high-k tantalum oxide with dielectric permittivity,

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“…This is accompanied by PR heating that not only can lead to thermal degradation [5] but also to enhanced degradation by plasma radiations [6] or to an extension of the degradation deeper into the film when temperature rises above the PR glass transition temperature (T g ) [7].…”

Section: Introductionmentioning

confidence: 99%

Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

Kesters

Claes

et al. 2008

Thin Solid Films

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Resist degradation under plasma exposure: Synergistic effects of ion bombardment

Cited by 29 publications

References 11 publications

Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source

Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source

Dielectric Response of Tantalum Oxide Deposited on Polyethylene Terephthalate (PET) Film by Low-Temperature Pulsed-DC Sputtering for Wound Capacitors

Chemical and structural modifications in a 193-nm photoresist after low-k dry etch

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