Resist Homogeneity

Arjmandi, Nima

doi:10.5772/56618

Cited by 1 publication

(1 citation statement)

References 19 publications

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“…Here, we took a counterintuitive approach: by applying hexamethyldisilazane (HMDS) to make the graphene surface fully hydrophobic, irrespective of microscopic defects. HMDS is a readily available chemical called “primer” or “adhesion promoter” in most fabrication centers, used to make the surface hydrophobic so that photoresist can adhere to the entire substrate . It has been also used in graphene FET before or after the transfer to provide an inert interface with graphene and to increase the mobility. − Especially, the application of HMDS was not detrimental to graphene at all.…”

Section: Introductionmentioning

confidence: 99%

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al₂O₃ Films on Graphene

Jeon

Jerng

Akbar

et al. 2016

ACS Appl. Mater. Interfaces

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The deposition of thin and uniform dielectric film on graphene is an important step for electronic applications. Here, we tackled this problem by combining a simple chemical treatment of graphene surface and a modification of standard atomic layer deposition (ALD). Instead of common approaches trying to convert hydrophobic graphene surface into hydrophilic one, we took the opposite way by applying a self-assembled-monolayer, hexamethyldisilazane (HMDS) to make defect-independent, more hydrophobic surface condition. In addition, AlO ALD using trimethylaluminum (TMA) and water (HO) was interrupted several times and the surface was air-exposed during the interruption to seed the following ALD processes. This combination greatly improved the uniformity of dielectric film and accomplished a successful deposition of 10 nm-thick AlO on graphene with subnanometer roughness except for the locations of wrinkles and poly(methyl methacrylate) (PMMA) residues. Electrochemical impedance measurements revealed a 300-fold increase in the charge-transfer resistance by employing this modified ALD process. No change in the Raman spectra was observed after the dielectric film growth, demonstrating that the method proposed here is nondetrimental to the graphene quality.

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Section: Introductionmentioning

confidence: 99%

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al₂O₃ Films on Graphene

Jeon

Jerng

Akbar

et al. 2016

ACS Appl. Mater. Interfaces

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show abstract

Resist Homogeneity

Cited by 1 publication

References 19 publications

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al₂O₃ Films on Graphene

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al₂O₃ Films on Graphene

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Resist Homogeneity

Cited by 1 publication

References 19 publications

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al2O3 Films on Graphene

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al2O3 Films on Graphene

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Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al₂O₃ Films on Graphene

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al₂O₃ Films on Graphene