Resist parameter sensitivity analysis based on calibrated simulation for understanding resist limitations in next generation lithography

Elian, Klaus; Ruppenstein, B.; Noelscher, Christoph; Heubner, A.; Muelders, Thomas

doi:10.1016/j.mee.2006.01.071

Cited by 3 publications

(1 citation statement)

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“…Because of the increasing importance of polymer-size effects at this level, e.g., their impact on LER and line width variation, there is a growing need of photoresist studies based on molecular level models. To improve this, several stochastic approaches have also been proposed in the literature. − These models are more time-consuming, because they consider ensembles of discretely interacting materials. On the other hand, they can quantify realistic material physical and chemical properties such LER.…”

Section: Introductionmentioning

confidence: 99%

Understanding Acid Reaction and Diffusion in Chemically Amplified Photoresists: An Approach at the Molecular Level

Rodríguez-Cantó

Nickel

Abargues³

2011

J. Phys. Chem. C

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Acid diffusion in chemically amplified resist might limit the ultimate minimum half-pitch that can be achieved with high sensitivity resists unless diffusion length is reduced until new methods of sensitizing resists are found. Precise knowledge of molecular dynamics of resist materials and advanced techniques need to be developed actively for this issue. In this sense, computer simulations have become a valuable tool in terms of reducing time and costs. However, simulations are generally based on continuum or mesoscale models, which are unable to accurately predict variations at the molecular level. Deeper understanding and investigation of the coupled reaction-diffusion kinetics at the molecular scale during the postexposure bake (PEB) become crucial to achieve nanoscale features with good critical dimension control and good line-edge roughness. In this work we have developed a molecular level approach for understanding of the coupled acid-catalyzed diffusion process in chemically amplified resist systems. Here, the molecules of photoacid generator are selected as the building blocks of a three-dimensional grid. Reaction and diffusion of the photoconverted acid molecules during the PEB step will produce resist volumes of cleaved polymers. After a certain PEB time τ, these created volumes produced by adjacent acids will almost contact each other, enabling the subsequent development of the polymer. We also determine this parameter τ by means of experiments with real resist systems and investigate the influence of the process conditions on it.

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