Resist stripping in an O2+H2O plasma downstream

Fujimura, Shigefumi

doi:10.1116/1.585575

Cited by 61 publications

(33 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fujimura et al reported that H 2 O removed a photoresist film faster than O 2 in the resist stripping process, which is probably due to OH radicals. 30 In addition, to use an analogy of their results, hydrogen can also assist the fluorocarbon removal to react with fluorine to form HF gas. Thus, it is possible to remove fluorocarbon depositions effectively with H 2 O than with O 2 .…”

Section: Effect Of Additional H 2 O In Sioch Etchingmentioning

confidence: 98%

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

Momonoi

Yonekura

Izawa

2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

We investigated the mechanism for differences in etched depth between isolated and dense via holes of a damascene structure using a SiOCH film (k=2.8). In Ar∕CHF3∕N2 and Ar∕C4F6∕N2 plasmas, the depth of an isolated (4.8μm pitch) hole was more than 40% varied from a dense (200nm pitch) hole. The difference between dense and isolated holes was found to become larger with increasing air exposure time of the wafer. The amount of H2O in the SiOCH film also increased with increasing air exposure time based on thermal desorption spectroscopy (TDS) analysis. Therefore, we investigated the effects of H2O addition to the plasmas. The investigation revealed that the etched depths of dense holes became similar to those of isolated holes with H2O addition. Based on these results, we concluded that the mechanism for the difference between isolated and dense holes was as follows. When the capping layer on SiOCH is etched, the H2O contained in SiOCH desorbs in etched holes and affects etching reactions. The etching characteristics of isolated holes are significantly affected, since the amount of desorbed H2O in isolated holes is larger than that in dense holes.

show abstract

Section: Effect Of Additional H 2 O In Sioch Etchingmentioning

confidence: 98%

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

Momonoi

Yonekura

Izawa

2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…Since chamber pressure of the asher is too high to characterize the plasma by the Langmuir probe and abundant reactive species are radicals at this pressure, [9][10][11] multichannel optical emission spectroscopy is used to identify ions and radicals. Figure 2 shows the emission spectra of O 2 plasma at 200 and 2.67 Pa of chamber pressures, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Compared to anisotropic pattern transfer etching, the photoresist ashing process is isotropic and is usually done at higher process pressures between 133 and 399 Pa at which oxygen radicals are the major reaction species. [9][10][11] Commercial photoresist ashers get a downstream supply of oxygen radicals generated by microwave surface excitation 9 or the microwave cavity resonance scheme 10 or radio frequency ICP. 11 Ash rate distribution is closely related to radical supply as reported by ICP ashing experiments.…”

Section: Introductionmentioning

confidence: 99%

Effect of time-varying axial magnetic field on photoresist ashing in an inductively coupled plasma

Park

Song

Beom‐Hoan

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…In the following, we will discuss the reason of the increase and the decrease in removal rate. The increase in the removal rate is presumably ascribed to OH radicals because OH radicals must be more important than O radicals in the photoresist removal [17,22,23]. The decrease is explained by the decrease in the production rate of H radicals caused by the poisoning of oxygen [20].…”

Section: Resultsmentioning

confidence: 99%

Photoresist Removal Using H Radicals Generated by Iridium Hot-Wire Catalyst

Yamamoto¹,

Nagaoka²,

Umemoto³

et al. 2017

International Journal of Polymer Science

View full text Add to dashboard Cite

We examined an environmentally friendly photoresist removal method using H radicals produced by decomposing hydrogen on a hot iridium catalyst. We examined the relationship between photoresist removal rate and its surface temperature using thin film interference and the removal properties using H radicals produced by the Ir catalyst. Decomposition behavior at polymer surface by radicals may be analyzed in further detail from the aspect of kinetics. Additionally, we investigated the oxygen addition effects on the removal rate. The photoresist removal rate increased with the oxygen additive amount and then decreased more gradually than in the case of using W filament. The increasing behavior was similar but there was a large difference between W and Ir catalyst in the decreasing behavior.

show abstract

Resist stripping in an O2+H2O plasma downstream

Abstract: Articles you may be interested inComparison of the effects of downstream H2-and O2-based plasmas on the removal of photoresist, silicon, and silicon nitride Summary Abstract: Polyimide etching and passivation downstream of an O2-CF4-Ar microwave plasma

Cited by 61 publications

References 2 publications

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

Mechanism for difference in etched depth between isolated and dense via holes of SiOCH film

Effect of time-varying axial magnetic field on photoresist ashing in an inductively coupled plasma

Photoresist Removal Using H Radicals Generated by Iridium Hot-Wire Catalyst

Contact Info

Product

Resources

About