Resistance bi-stability in resonant tunneling diode pillar arrays

Abstract

We have fabricated and characterized resonant tunneling diode pillar arrays. The array resistance switches between two stable states with a maximum room temperature current peak to valley ratio of 500:1. Both the high and the low resistance states are stable at zero bias suggesting that the device may be used for non-volatile memory storage.

Electrically programmable resistor on semi-insulating GaAs

“…Other non-volatile memory phenomena in intentionally fabricated small (diameter ∼0.1 µm) resonant tunnelling diodes have also been reported and may be related to our observations and explanations [2,3].…”

Enhanced electro-optic modulation by integration of nonradiative centers in a resonant tunneling light emitting diode

“…The p ϩ surface layer is etched into an array of nanoscale pillars using the granular lithographic technique that has been described previously. 5 SEM analysis reveals that the pillar etch depth is approximately 150 nm and that the pillars are between 20 and 50 nm in diameter. We make contact to the pillars using a sputtered Indium/Tin Oxide ͑ITO͒ transparent film.…”