1996
DOI: 10.1016/0026-2714(96)00175-8
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Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5% Cu lines

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Cited by 13 publications
(8 citation statements)
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“…A small discrepancy between experiments and simulations is detected in the intermediate resistance evolution, where the flat behavior found in the experiments is compared to a slow resistance increase in the simulations. This is actually what one could expect since presently our model does not take into account the well known electronwind assisted precipitation of Cu [12], which most likely counteracts the slow resistance increase due to Al transport in Al.…”
Section: Resultsmentioning
confidence: 80%
“…A small discrepancy between experiments and simulations is detected in the intermediate resistance evolution, where the flat behavior found in the experiments is compared to a slow resistance increase in the simulations. This is actually what one could expect since presently our model does not take into account the well known electronwind assisted precipitation of Cu [12], which most likely counteracts the slow resistance increase due to Al transport in Al.…”
Section: Resultsmentioning
confidence: 80%
“…Thus, they account for the variation in the alloy composition during the EM test due to the electron wind and/or to thermal effects (alloying effects). 11,[28][29][30] Finally, the broken resistors correspond to the presence of microvoids at the grain boundary and, possibly, inside the grains. These broken resistors of resistance r OP (OP stays for open circuit) are thus associated with very high resistivity regions inside the line.…”
Section: Modelmentioning
confidence: 99%
“…the reduction of the number of scattering centers of Cu in the solid solution, cause an initial decrease of the line resistance. 11 Here, we consider the data obtained at T = 492 K, shown in Ref. 28, and the data obtained at T = 467 K, reported in the following section.…”
Section: Modelmentioning
confidence: 99%
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