Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

Prakash, Amit; Deleruyelle, Damien; Song, Jeonghwan; Bocquet, Marc; Hwang, Hyunsang

doi:10.1063/1.4922446

Cited by 84 publications

(56 citation statements)

References 18 publications

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“…It has been shown in the literature 3,4 and is shown in this work that atomic doping can improve both requirements. Evolution of a conductive filament and its rupture and restoration have been studied by various analytical and numerical models [10][11][12][13][14] We have previously reported the properties of Ovac in the λ phase of Ta2O5 crystal 15 and in the amorphous Ta2O5 network 16 through sX density functional simulations.…”

Section: The Reduction In Hrs Current Withmentioning

confidence: 52%

“…This effect has been observed in sputtered TaOx films by controlling the oxygen partial pressure during sputtering 3 . It was concluded that the variability of the conductive filament resistance depends on both the filament diameter and the oxygen vacancy density in the filament.…”

Section: The Reduction In Hrs Current Withmentioning

confidence: 82%

“…The MLC enables multi-bit storage capacity and potentially increases the storage capacity for ultra-high density memory applications. It has been reported that the variability of resistance associated with a CF depends on the conductive filament size and also the oxygen vacancy concentration 3 . The multilevel switching is commonly achieved by adjusting the LRS current by changing the compliance during the set cycle [2][3][4][5] .…”

mentioning

confidence: 99%

“…It has been reported that the variability of resistance associated with a CF depends on the conductive filament size and also the oxygen vacancy concentration 3 . The multilevel switching is commonly achieved by adjusting the LRS current by changing the compliance during the set cycle [2][3][4][5] . Less common is to change the HRS current by changing the maximum voltage during the reset 5,6 .…”

mentioning

confidence: 99%

“…Varying the former, changes the LRS current and varying the latter changes the HRS current, both resulting in intermediate states within the upper and lower parts of the memory window, respectively, resulting in MLC switching behavior. The increase in LRS current with increase in set current compliance is related to larger radius of the conductive filament and also the higher concentration of O vacancies within the filament 3 …”

mentioning

confidence: 99%

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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Sedghi

Brunell

et al. 2017

Applied Physics Letters

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The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attributed to neutralization of electronic defect levels associated with oxygen vacancies. The density functional simulations with the screened exchange hybrid functional approximation show that the incorporation of nitrogen dopant atoms in the oxide network removes the O vacancy midgap defect states, thus nullifying excess defects and eliminating alternative conductive paths. By effectively reducing the density of vacancy-induced defect states through N doping, 3-bit multilevel cell switching is demonstrated, consisting of eight distinctive resistive memory states achieved by either controlling the set current compliance or the maximum voltage during reset. Nitrogen doping has a threefold effect: widening the switching memory window to accommodate the more intermediate states, improving the stability of states, and providing a gradual reset for multi-level cell switching during reset. The N-doped Ta2O5 devices have relatively small set and reset voltages (< 1 V) with reduced variability due to doping.

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Section: The Reduction In Hrs Current Withmentioning

confidence: 52%

Section: The Reduction In Hrs Current Withmentioning

confidence: 82%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Sedghi

Brunell

et al. 2017

Applied Physics Letters

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A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

2017

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The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH NH PbI layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 s. Moreover, the use of sequential vapor deposition is extended to deposit CH NH PbI as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.

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On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics

2017

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Rapid advances in the semiconductor industry, driven largely by device scaling, are now approaching fundamental physical limits and face severe power, performance, and cost constraints. Multifunctional materials and devices may lead to a paradigm shift toward new, intelligent, and efficient computing systems, and are being extensively studied. Herein examines how, by controlling the internal ion distribution in a solid‐state film, a material's chemical composition and physical properties can be reversibly reconfigured using an applied electric field, at room temperature and after device fabrication. Reconfigurability is observed in a wide range of materials, including commonly used dielectric films, and has led to the development of new device concepts such as resistive random‐access memory. Physical reconfigurability further allows memory and logic operations to be merged in the same device for efficient in‐memory computing and neuromorphic computing systems. By directly changing the chemical composition of the material, coupled electrical, optical, and magnetic effects can also be obtained. A survey of recent fundamental material and device studies that reveal the dynamic ionic processes is included, along with discussions on systematic modeling efforts, device and material challenges, and future research directions.

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Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application

Cited by 84 publications

References 18 publications

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics

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