1976
DOI: 10.1039/f19767200842
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Resistance relaxation studies of gas/metal reactions leading to simultaneous dissolution and gasification. The dissociated oxygen/tantalum system above 2000 K. Part 1.—Methodology and the role of atomic oxygen

Abstract: By measuring the electrical resistance of tantalum filaments (i) during isothermal reaction with oxygen, (ii) after isothermal degassing, and (iii) after rapid temperature quench, we infer both the instantaneous dissolved oxygen concentration and the metal " gasification " rate. For the conditions : 1.6 x lo-' Q p(oxygen) Q 0.67 Pa, 2400 K < Tw < 2800 I ( , the following mechanistic conclusions are drawn concerning the production/desorption of metal oxides [TaO(g), TaO,(g)] and the cause of the observed enhanc… Show more

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