1999
DOI: 10.1109/22.808985
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Resistive FET mixer conversion loss and IMD optimization by selective drain bias

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Cited by 32 publications
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“…MOS transistor exhibits best linearity at some specific VDS [9]. It is analyzed that the third derivative of output transconductance (gds3) of the transistor has minimum value at a drain bias of 150 mV as shown in Fig.7.…”
Section: Offset Mixer Placementmentioning
confidence: 99%
“…MOS transistor exhibits best linearity at some specific VDS [9]. It is analyzed that the third derivative of output transconductance (gds3) of the transistor has minimum value at a drain bias of 150 mV as shown in Fig.7.…”
Section: Offset Mixer Placementmentioning
confidence: 99%