Resistive switching and impedance characteristics of M/TiO2−x/TiO2/M nano-ionic memristor

Dash, Chandra Sekhar; Sahoo, Satyajeet; Prabaharan, S. R. S.

doi:10.1016/j.ssi.2018.07.012

Cited by 44 publications

(35 citation statements)

References 33 publications

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“…In addition, these films show poor switching as shown in figure 3(c), where the incomplete switching of the initial plot may be attributed to the incomplete movement of oxygen vacancies due to the short duration of the switching voltage application. On the contrary, Au-contacted titania thin films formed by other methods have been reported to show filamentary resistive switching with high switching ratios [29][30][31][32][33][34]. A plausible explanation of this difference is a lower expected density of oxygen vacancies in nanosheet-derived films.…”

Section: Resultsmentioning

confidence: 97%

Tolerance against conducting filament formation in nanosheet-derived titania thin films

et al. 2020

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Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO 2 . Nanosheet-derived titania thin films exhibit poor resistive switching with an interface-type mechanism. This behaviour is distinct from the filamentary switching that has been observed with titania thin films fabricated by other conventional techniques. This tolerance against conducting-filament formation may be ascribed to a low concentration of oxygen vacancies in nanosheet-derived films, which is expected because of the O/Ti ratio of titania (Ti 0.87 O 2 ) nanosheets being larger than that of TiO 2 . Besides, the dielectric breakdown strength of nanosheet-derived films is found to be comparable to or higher than that of titania thin films fabricated by other techniques. These findings clearly indicate the usefulness of nanosheet-derived titania thin films for dielectric applications.

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Section: Resultsmentioning

confidence: 97%

Tolerance against conducting filament formation in nanosheet-derived titania thin films

et al. 2020

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“…With this analysis it is possible to tackle any device of this type and understand where the switching actually takes place. There has been an example of this in the literature 42 . In this case, a device which consisted of two layers is represented as two different semicircles in a Nyquist plot and a switching event changes one of them.…”

Section: Examplesmentioning

confidence: 98%

Technology agnostic frequency characterization methodology for memristors

Manouras

Stathopoulos

Serb

et al. 2021

Sci Rep

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Over the past decade, memristors have been extensively studied for a number of applications, almost exclusively with DC characterization techniques. Studies of memristors in AC circuits are sparse, with only a few examples found in the literature, and characterization methods with an AC input are also sparingly used. However, publications concerning the usage of memristors in this working regime are currently on the rise. Here we propose a "technology agnostic" methodology for memristor testing in certain frequency bands. A measurement process is initially proposed, with specific instructions on sample preparation, followed by an equipment calibration and measurement protocol. This article is structured in a way which aims to facilitate the usage of any available measurement equipment and it can be applied on any type of memristive technology. The second half of this work is centered around the representation of data received from following this process. Bode plot and Nyquist plot representations are considered and the information received from them is evaluated. Finally, examples of expected behaviors are given, characterizing simulated scenarios which represent different internal device models and different switching behaviors, such as capacitive or inductive switching. This study aims at providing a cohesive way for memristor characterization, to be used as a good starting point for frequency applications, and for understanding physical processes inside the devices, by streamlining the measuring process and providing a frame in which data representation and comparison will be facilitated.

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“…There have been a few reports in the literature [15] [21] [22] where memristors have been described via an RC circuit. In figures 1(c,d) the typical state of a TiO x /Al 2 O 3 device is given with a behavior akin to that of a low pass filter.…”

Section: Electrically Programmable Behaviormentioning

confidence: 99%

“…We further show that such devices are much more than static tunable resistors and need to be represented via an RC empirical model, as depicted in Figure 1(a). Variations of this electrical model have been hinted in the literature for memristors with different characteristics [15], [21], [22], but, to the best of our knowledge, a full RC-level description with regards to the devices' switching remained outstanding till this work. We further present an analysis of the devices' behavior in a range of frequencies and assess the electrical reconfigurability of the devices over the same frequency range.…”

Section: Introductionmentioning

confidence: 99%

Frequency Response of Metal-Oxide Memristors

Manouras

Stathopoulos

Garlapati

et al. 2021

IEEE Trans. Electron Devices

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Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their state-dependent programmability in a static fashion. However, practical applications of memristor-based AC circuits have been rather sparse, with only a few examples found in the literature where their use is emulated at higher frequencies. In this work, we study the behavior of metal-oxide memristors under a non-invasive AC perturbation in a range of frequencies, from 10 3 to 10 7 Hz. Metal-oxide memristors are found to behave as RC low-pass filters and they present a variable cutoff frequency when their state is switched, thus providing a window of reconfigurability when used as filters. We further study this behaviour across distinct material systems and we show that the usable reconfigurability window of the devices can be tailored to encompass specific frequency ranges by amending the devices' capacitance. This study extends current knowledge on metal-oxide memristors by characterising their frequency dependent characteristics, providing useful insights for their use in reconfigurable AC circuits.

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Resistive switching and impedance characteristics of M/TiO2−x/TiO2/M nano-ionic memristor

Cited by 44 publications

References 33 publications

Tolerance against conducting filament formation in nanosheet-derived titania thin films

Tolerance against conducting filament formation in nanosheet-derived titania thin films

Technology agnostic frequency characterization methodology for memristors

Frequency Response of Metal-Oxide Memristors

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