Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures

Rosário, Carlos M. M.; Горшков, О. Н.; Касаткин, А. П.; Антонов, И. Н.; Королев, Д. С.; Mikhaylov, A. N.; Соболев, Н. А.

doi:10.1016/j.vacuum.2015.05.007

Cited by 6 publications

(5 citation statements)

References 25 publications

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“…This variation will be discussed in Section 3.3. The EF can be induced by both positive and negative voltages, but the final state depends on the EF polarity [24]. If the voltage is positive, the obtained state corresponds to the HRS; is it negative, the state afterwards obtained is the LRS.…”

Section: Methodsmentioning

confidence: 99%

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Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

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The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and rupture of conductive pathways (filaments) in oxide films due to the electric-field-driven migration of oxygen vacancies and/or mobile oxygen ions. It is shown that, for both ionic and covalent oxides under study, the RS behaviour depends only weakly on the oxide film composition and thickness, device geometry (down to a device size of about 20x20 mu m(2)). The devices under study are found to be tolerant to ion irradiation that reproduces the effect of extreme fluences of high-energy protons and fast neutrons. This common behaviour of RS is explained by the localized nature of the redox processes in a nanoscale switching oxide volume. Adaptive (synaptic) change of resistive states of memristive devices is demonstrated under the action of single or repeated electrical pulses, as well as in a simple model of coupled (synchronized) neuron-like generators. It is concluded that the noise-induced phenomena cannot be neglected in the consideration of a memristive device as a nonlinear system. The dynamic response of a memristive device to periodic signals of complex waveform can be predicted and tailored from the viewpoint of stochastic resonance concept. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

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Section: Methodsmentioning

confidence: 99%

“…It is practically important that the RS is maintained over the wide temperature range from the lowest temperatures (liquid helium) [24] up to at least 400 K. Higher temperatures correspond to the reversible thermal degradation of RS (converging the resistive states) [23].…”

Section: Structure and Electronic Properties Of The Used Oxides And Cmentioning

confidence: 99%

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

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“…Complex-impedance spectroscopy is a well-known technique which is used to investigate the dielectric/electrical properties of electroceramic materials. As this technique has potential for separating the contributions of complex impedance from different regions of the material or device, it has been used in the study of RS effects in several devices [126][127][128][129]. Kamble et al [127] used impedance spectroscopy to study the coexistence of meminductive and memristive memory effects in an Al/ MnO 2/ SS RS device.…”

Section: Impedance Spectroscopymentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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Among the emerging memories, resistive switching (RS) based resistive random-access memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal structures, low power consumption, long endurance and retention characteristics, low fabrication cost, ultrafast switching, and CMOS compatibility. In recent years, several oxides, chalcogenides, polymers and their composites have been explored for RS devices. Many of these studies show a high resistance ratio of the OFF and ON states with good RS characteristics. Some of these studies also show the realization of multifunctional RS devices such as the simultaneous switching of resistance and magnetic states. In order to scale up RS-based RRAMs, a detailed understanding of the occurrence of RS is very much desirable. In this review, we provide an overview of the current understanding, recent advances and future outlook of RS-based RRAM devices along with fundamental concepts of the different types of RS, and conventional as well as novel measurement techniques which are being used to characterize RS devices. Observations of RS in different materials are presented, and RS mechanisms, such as the valence change mechanism and electrochemical metallization memory, are discussed in detail. An overview of multifunctional RS devices and the main challenges faced in scaling up RS devices is also presented.

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“…One of the challenges for the ReRAM technology is presented by the necessity of the forming process. The forming process is an act of the first switching of a memristor, typically to the LRS, although, in some cases, switching to the HRS or an intermediate state occurs instead [11]. Usually, the forming process occurs at voltages significantly exceeding the voltages of subsequent RS cycles [3,[11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…The forming process is an act of the first switching of a memristor, typically to the LRS, although, in some cases, switching to the HRS or an intermediate state occurs instead [11]. Usually, the forming process occurs at voltages significantly exceeding the voltages of subsequent RS cycles [3,[11][12][13]. Therefore, lowering the forming voltage or even its complete elimination is quite desirable.…”

Section: Introductionmentioning

confidence: 99%

Influence of the active TaN/ZrO_x/Ni memristor layer oxygen content on forming and resistive switching behavior

et al. 2021

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The influence of oxygen content in active zirconium oxide layers on the electrophysical properties of TaN/ZrO x /Ni memristors is investigated. The [O]/[Zr] atomic ratio (x) in the oxide layers was varied in the range from 1.56 to 2.0 by changing the partial oxygen pressure during their deposition by ion-beam sputtering deposition. The ZrO x film compositions were analyzed using x-ray photoelectron spectroscopy and density functional theory simulations. The multiple resistive switching phenomenon in TaN/ZrO x /Ni memristors was found to occur in a certain range of x ≥ 1.78. With the x value decreasing in the oxide layers, the forming voltage of memristors decreased. Furthermore, at the lower edge of x values the switchable range, they no longer required forming. At the same time, as the x value decreased, the memory window (I ON/I OFF ratio) also decreased from 5 to 1 order of magnitude due to an increase in the memristor conductivity in the high resistance state. In order to identify the underlying conduction mechanism of TaN/ZrO x /Ni memristors, their current–voltage curves in low and high resistance states were analyzed in the temperature range from 250 to 400 K for the samples with x = 1.78 (forming-free) and 1.97 (which required forming). It was found that, for both samples, the conductivity in the low-resistance state is characterized by the trap-free space-charge-limited current (SCLC) model, whereas the conductivity in the high-resistance state is characterized by the trap-mediated SCLC model. The possible origins of structural defects involved in the memristor conductivity and resistive switching are discussed based on the obtained results.

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Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures

Cited by 6 publications

References 25 publications

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Advances in resistive switching based memory devices

Influence of the active TaN/ZrO_x/Ni memristor layer oxygen content on forming and resistive switching behavior

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Resistive switching and impedance spectroscopy in SiO -based metal-oxide-metal trilayers down to helium temperatures

Cited by 6 publications

References 25 publications

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Advances in resistive switching based memory devices

Influence of the active TaN/ZrO x /Ni memristor layer oxygen content on forming and resistive switching behavior

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Product

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Influence of the active TaN/ZrO_x/Ni memristor layer oxygen content on forming and resistive switching behavior