Resistive switching characteristics of Ag2O/TiO2 bilayer film based memristor

Liang, Haotian; Ke, Chuan; Sun, Bai; Zhu, Shouhui; Wang, Jiangqiu; Chen, Yang; Mao, Shuangsuo; Zhao, Yong

doi:10.1016/j.molstruc.2023.135717

Journal of Molecular Structure

2023

DOI: 10.1016/j.molstruc.2023.135717

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Resistive switching characteristics of Ag2O/TiO2 bilayer film based memristor

Haotian Liang

Chuan Ke

Bai Sun

et al.

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2024

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Cited by 2 publications

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Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction

Elshekh,

Wang,

Yang

et al. 2024

Journal of Applied Physics

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Two-terminal structure memristors are the most promising electronic devices that could play a significant role in artificial intelligence applications of the next generation and the post-Moore era. In this work, we fabricated the memristive device by depositing a heterojunction WOx/TiOy functional layer onto an indium tin oxide substrate using magnetron sputtering. The Ag/WOx/TiOy/ITO device exhibits improved memory behavior of bipolar resistive switching (RS) nonvolatile compared to TiOy-based single-layer memristors, enabling it to meet high-density information storage requirements. Moreover, our device exhibited the coexistence of the negative differential resistance effect and the behavior of the RS memory. Through a comprehensive analysis of conductivity on the curve of current–voltage (I–V), a physical model based on the mechanism of space charge-limited current, ohmic conduction, and Schottky emission was suggested to explain the behavior device RS memory. This study's findings demonstrate that including a heterojunction bilayer WOx/TiOy as a functional layer can significantly improve the performance of memristive devices. This advancement expands the potential application of ferroelectric metallic oxide heterojunctions within the field of memristors.

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Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction

Elshekh,

Wang,

Yang

et al. 2024

Journal of Applied Physics

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Recent Advancements in 2D Material-Based Memristor Technology Toward Neuromorphic Computing

Park,

Naqi,

Lee

et al. 2024

Micromachines

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Two-dimensional (2D) layered materials have recently gained significant attention and have been extensively studied for their potential applications in neuromorphic computing, where they are used to mimic the functions of the human brain. Their unique properties, including atomic-level thickness, exceptional mechanical stability, and tunable optical and electrical characteristics, make them highly versatile for a wide range of applications. In this review, we offer a comprehensive analysis of 2D material-based memristors. Furthermore, we examine the ability of 2D material-based memristors to successfully mimic the human brain by referencing their neuromorphic applications.

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Resistive switching characteristics of Ag2O/TiO2 bilayer film based memristor

Cited by 2 publications

References 35 publications

Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction

Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction

Recent Advancements in 2D Material-Based Memristor Technology Toward Neuromorphic Computing

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