Resistive Switching Characteristics of WO₃/ZrO₂ Structure With Forming-Free, Self-Compliance, and Submicroampere Current Operation

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

“…3D Xpoint PRAM connected to an ovonic threshold switch was already on market, which plays an intermediate role between NAND and DRAM as a storage class memory (SCM) . The RRAM‐based crosspoint array also shows great potential for implementation in SCM and embedded applications because of its outstanding performance such as fast switching operation, low‐power consumption, multilevel capability, high endurance, and high scalability in conventional complementary metal–oxide–semiconductor (CMOS) processing technologies . Compared to PRAM, which shows disadvantages in terms of a thick GeSbTe layer and the absence of chemical vapor deposition (CVD) capability for good performance, RRAM is more stable in high temperature processes, and it can be deposited by CVD to form thin layer (≈5 nm) materials which are especially suitable for fabricating three‐dimensional vertical structures .…”

Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

“…[1][2][3][4] Alternately, electrical resistance switch-based memory (RRAM) has attracted intense research interest as a promising candidate for use in next-generation non-volatile memory due to its high scalability down to a few nanometers and high-density integration with CMOS technology. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] Conventional devices consist of a metal-insulator-metal (MIM) structure, with insulator resistance switching caused by the diffusion of oxygen vacancies/defects, charge carrier trapping and de-trapping, and Schottky barrier modulation to produce the memory effect. 5 Even though many dielectric materials such as HfO x (ref.…”

Enhancing Short-Term Plasticity by Inserting a Thin TiO2 Layer in WOx-Based Resistive Switching Memory

“…High current operation is inevitable during the set (high-resistance state (HRS) to low-resistance state (LRS)) and reset (LRS to HRS) processes due to initially high current flow. WOx-based RRAM devices show both filamentary and non-filamentary switching depending on device size, film thickness, operating condition, electrode type, and presence and type of insulating layer [28][29][30][31][32][33]. Filamentary switching was clearly observed in high current operation in the Pt/WOx/W device [42].…”

“…Binding energy (eV) [28][29][30][31][32][33]. Filamentary switching was clearly observed in high current operation in the Pt/WO x /W device [42].…”

“…Non-filamentary type switching is more suitable for fine weight updates compared to filamentary type switching when implementing synaptic behaviors [27]. Metal oxides such as WO x [28][29][30][31][32][33], TiO x [34][35][36], and TaO x [37,38] show both filamentary and non-filamentary switching depending on the process conditions, film thickness, combination of electrodes, and switching operation.…”