Resistive switching effects in electromigrated Ni nanogaps

Articles you may be interested inFabrication of planar-type Ni/vacuum/Ni tunnel junctions based on ferromagnetic nanogaps using field-emissioninduced electromigrationThe authors report on the ability to control the tunnel resistance of suspended Ni nanogaps by field-emission-induced electromigration. This method is called "activation." Suspended Ni nanogaps are ideal for investigating activation because the leakage currents flowing through the substrates are suppressed in these structures. The tips of suspended Ni nanogap electrodes are isolated from the SiO 2 substrates, so it is expected that the suspended Ni nanogaps act as isolated tunnel junctions during activation. After undergoing activation, the suspended Ni nanogaps clearly exhibited tunneling I-V properties. Furthermore, the authors were able to tune the tunnel resistance of the suspended Ni nanogaps using the activation method. When the applied voltage was swept, the device current switched between high-and low-resistance states. The results imply that activation is a viable method for modulating the electrical properties of suspended Ni nanogaps at the nanometer scale.

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Resistive switching effects in electromigrated Ni nanogaps

Cited by 2 publications

References 20 publications

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

Controlling the tunnel resistance of suspended Ni nanogaps using field-emission-induced electromigration

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