Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La3Ga5SiO14 Substrate Using Electron Beam Irradiation

Abstract

Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed using electron beam irradiation. The resulting bigraphene/diamane structure exhibits nonlinear charge carrier transport behavior and a significant increase in resistance. It is shown that the resistive switching of the nanostructure is well controlled using bias voltage. The impact of an electrical field on the bonding of diamane-stabilizing functional groups is investigated. By subjecting the lateral bigraphene/diamane/bigraphene nanostructure to a sufficiently strong electric field, the migration of hydrogen ions and/or oxygen-related groups located on one or both sides of the nanostructure can occur. This process leads to the disruption of sp3 carbon bonds, restoring the high conductivity of bigraphene.

Comprehensive Study of SDC Memristors for Resistive RAM Applications

“…It follows that memristors can serve as a non-volatile analogue memory. The existence of nanoscale memristor behavior opens up a wide range of possibilities in the realization of low-power, high-density memory technologies that could replace existing technologies (flash memories and dynamic random-access memories) and have been thoroughly examined in-depth over the past few decades through extensive scientific research [5][6][7][8][9][10][11][12]. When two sufficiently different internal state values are chosen to encode desired states, memristors can be used as non-volatile multi-state memory cells [13][14][15][16].…”