Resistive switching in natural silk fibroin protein-based bio-memristors

Abstract

Natural silk fibroin protein has been used for the fabrication of bio-memristors. The origin of the resistive switching characteristics is investigated in detail. The conduction mechanism in silk protein is found to be controlled by multi-charge transport mechanisms along with filamentary type conduction process. The redox process via hopping mechanism is found to be responsible for charge transport in silk protein. The lowfrequency noise (LFN) study reveals that the fluctuation in the current level is due to the traps existing near the conducting filaments (CFs). It is shown for the first time that the amide I region is mainly responsible for the conductivity change in silk fibroin protein-based bio-memristors under appropriate bias (polarity and magnitude) condition.

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

“…This type of memory is attractive due to its low operating power, high density, and high switching speed. 1,2 Since its discovery in 1960s, several materials have been studied as RS media, such as perovskites, 3 solid electrolytes, 4 binary transition metal oxides, 5 organics, 6 bio-materials, 7 etc. Different RS characteristics have also been observed including bipolar and unipolar switching.…”

Silk Fibroin for Flexible Electronic Devices

“…[ 32,[159][160][161][162][163][164] Silk protein exhibits more appealing properties compared with other biocompatible materials, such as ferritin, [ 159 ] cellulose, [ 165 ] and DNA, [ 166,167 ] for resistive-switching memory applications duo to its advantageous properties, such as mechanical robustness, fl exibility in thin-fi lm form, optical transparency, and compatibility with aqueous processing. [ 32,168 ] Silk-fi broin fi lms exhibited bipolar memristive switching behavior in a device with an indium tin oxide (ITO)/ fi broin/Al sandwich structure, with an OFF/ON ratio of 10 and retention time of 10 3 s. [ 78 ] The resistive switching of the above memristor was further studied at the microscopic scale, [ 169 ] which revealed that the current conduction process is dominated by fi lamentary conduction during LRS, and trap-assisted current conduction when in the HRS. However, the observed resistive-switching performance for the above ITO/fi broin/Al device is relatively low compared with that of memristive devices based on metal oxides of transition metals.…”

Resistive Switching Memory Devices Based on Proteins

“…Recently, protein molecules have been demonstrated to exhibit resistance switching memory characteristics. Moreover, during the past two years, significant progress has been made in the use of proteins for memory devices . In this Research News, we summarize the main advancements of the field, ranging from materials selection to device engineering, as well as the mechanism of protein‐based resistive switching memory, and the use of proteins in future biocompatible memory devices.…”