Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO<sub>3</sub>-based heterojunctions

Fan, Zhen; Fan, Hua; Yang, Lin; Li, Peilian; Lu, Zengxing; Tian, Guo; Huang, Zhifeng; Li, Zhongwen; Yao, Junxiang; Luo, Qiuyuan; Chen, Chao; Chen, Deyang; Yan, Z. B.; Zeng, Min; Lu, Xubing; Gao, Xingsen; Liu, Junming

doi:10.1039/c7tc02197f

Cited by 64 publications

(45 citation statements)

References 46 publications

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“…The contact potential difference can be converted to the work function of the sample if the measurement is performed under thermoequilibrium state, and it is the electrical potential when a bias is applied to the sample. Thus, a positive (negative) tip bias would attract the negative (positive) ions and/or polarization charges to the surface, making the surface potential lower (higher) [12]. This prediction is consistent with our observations in Fig.…”

Section: Resultssupporting

confidence: 90%

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Jia

Yang

et al. 2018

Nanoscale Res Lett

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Asymmetric resistive switching processes were observed in BaTiO3/Nb:SrTiO3 epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 105 ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO3/Nb:SrTiO3 heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.

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Section: Resultssupporting

confidence: 90%

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Jia

Yang

et al. 2018

Nanoscale Res Lett

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“…When the voltage drops from +5 to −5 V, the device is switched back to HRS, which is referred as the RESET process. The device keeps at HRS when sweeping from −5 to 0 V. This resistive switching direction is called as figure‐eight‐wise, which is also observed in Pt/NSTO Schottky junction . Figure c and d shows the hysteresis current–voltage curve in the sequence of 0 V → +V max (+5 V) → 0 V → −5 V (−V max ) → 0 V with different positive and negative voltage maximum (+V max , −V max ).…”

Section: Resultsmentioning

confidence: 67%

“…Resistive random access memory (RRAM) is one of the promising candidates for a high speed, high density, and low energy memory . One extensively studied type of resistive switching device consists of a heterojunction between a Nb:SrTiO 3 (NSTO) single crystal, and high work‐function metals such as Pt, Au or oxides such as SrRuO 3 and ZnO . These devices possess technologically attractive features, such as large on/off ratios, bipolar resistive switching, and continuously tunable resistance states.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric Resistive Switching Effect in Au/Nb:SrTiO₃ Schottky Junctions

Yang

et al. 2018

Physica Status Solidi (a)

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Asymmetric resistive switching processes are observed in Au/Nb:SrTiO 3 (NSTO) Schottky junctions. The SET transition from high-to low-resistance state occurs at 10 ns under þ2 to þ5 V bias, while the RESET transition from low-to high-resistance state occurs at 10 4 to 10 7 ns under À2 to À5 V bias. A model of electron trapping/detrapping coupled with the migration of oxygen vacancies toward/away from Au/NSTO Schottky junction interface is proposed to understand this fast SET and slow RESET process. This fast SET and slow RESET switch may have potential applications in some special regions. status solidi physica a Schottky Junctions www.pss-a.com

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“…Apparently, a higher light intensity and a shorter light wavelength can produce a larger ΔC. The large voltage applied to the Au/LSNO/Au capacitor can cause significant charge injection and trapping, [50,51] thus accelerating the capacitance decay (see detailed illustration in Figure S7, Supporting Information). [48,49] While the light stimuli can modulate the detrapping process, an alternative type of stimuli is needed to modulate the trapping process so as to manipulate the capacitance decay after switching OFF the illumination.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

Zhao

Fan

Cheng

et al. 2019

Adv Elect Materials

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away quickly when the light stimuli are removed. [3][4][5] In other words, traditional photodetectors can detect the images like a retina, but they lack the memory function owned by the visual cortex (see schematic illustration of human visual system in Figure 1a). To realize both detection and memory functions so as to better imitate the human visual system, researchers have attempted to integrate the photodetectors with the nonvolatile memory devices. [6][7][8][9] For example, a bioinspired visual system comprising an In 2 O 3 nanowire photodetector connected in series with an Al 2 O 3 memristor was fabricated recently, which could capture a butterflyshaped image and store it for more than 1 week. [9] In such integrated devices, however, the units responsible for detection, processing, and storage of optical information are physically separated, resulting in high power consumption for data transfer between different units (just as the Von Neumann bottleneck [10,11] ).A simple yet effective humanoid optoelectronic device emerging recently is the artificial optoelectronic synapse based on the photoelectric memristor, which can co-locate the detection and memory functions in a single unit. As the name suggests, a photoelectric memristor can continuously change its resistance upon light stimuli, resembling the physiological The rapid development of artificial intelligence technology has led to the urge for artificial optoelectronic synapses with visual perception and memory capabilities. A new type of artificial optoelectronic synapse, namely a photo electric memcapacitor, is proposed and demonstrated. This photoelectric memcapacitor, with a planar Au/La 1.875 Sr 0.125 NiO 4 /Au metal-semiconductormetal structure, displays a complementary optical and electrical modulation of capacitance, which can be attributed to the charge trapping/detrapping induced Schottky barrier variation. It further exhibits versatile synaptic functions, such as photonic potentiation/electric depression, pairedpulse facilitation, short/longterm memory, and "learningexperience" behavior. Moreover, the photoplasticity of the memcapacitor can be modulated by varying the frequency of applied AC voltage, thus enabling selfadaptive optical signal detection and mimicry of interestmodulated human visual memory. Therefore, it represents a new paradigm for artificial optoelectronic synapses and opens up opportunities for developing lowpower humanoid optoelectronic devices.

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Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO₃-based heterojunctions

Abstract: A unified mechanism for the colossal electroresistance effects in Nb:SrTiO3-based heterojunctions is revealed.

Cited by 64 publications

References 46 publications

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Asymmetric Resistive Switching Effect in Au/Nb:SrTiO₃ Schottky Junctions

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

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Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO3-based heterojunctions

Abstract: A unified mechanism for the colossal electroresistance effects in Nb:SrTiO3-based heterojunctions is revealed.

Cited by 64 publications

References 46 publications

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions

Asymmetric Resistive Switching Effect in Au/Nb:SrTiO3 Schottky Junctions

An Artificial Optoelectronic Synapse Based on a Photoelectric Memcapacitor

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Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO₃-based heterojunctions

Asymmetric Resistive Switching Effect in Au/Nb:SrTiO₃ Schottky Junctions