Resistive Switching of GaAs Oxide Nanostructures

Abstract

The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 1017 cm−3. X-ray photoelectron spectroscopy measurements showed that GaAs oxide consists of oxide phases Ga2O3 and As2O3, and the thickness of the Ga2O3 layer is 2–3 times greater than the thickness of As2O3 area—i.e., the oxidized GaAs region consists mainly of Ga2O3. The experimental studies of the influence of ONS thickness on the resistive switching effect were obtained. An increase in the ONS thickness from 0.8 ± 0.3 to 7.6 ± 0.6 nm leads to an increase in the switching voltage Uset from 2.8 ± 0.3 to 6.8 ± 0.9 V. The results can be used in the development of technological processes for the manufacturing of nano-electronic elements, such as ReRAM, as well as a high-efficiency quantum dot laser.

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

“…The biological brain supports various intellectual functions such as memory, learning, and decision-making [ 37 , 38 , 39 , 40 ]. One of the main ways of technical implementation of the biological brain is to manufacture ICs based on memristor structures, which are memory elements in the form of transition metal oxide film cells (neurons) that change their electrical resistance (between low-resistance (LRS) and high-resistance (HRS) states) under the action of an external electric field, connected by cross-synapses of data [ 41 , 42 , 43 , 44 , 45 , 46 ]. In doing so, ReRAM has a small cell size of a few nanometers, high integration density, high performance, and low power consumption, allowing it to mimic massive parallelism and low-power computing previously seen in the human brain [ 47 , 48 , 49 , 50 , 51 , 52 ].…”

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

“…[76,77] Local anodic oxidation by atomic force microscope (AFM) was found promising for the prototyping of oxide nanoscale structures, demonstrating a stable effect of resistive switching without the necessity for electroforming. [78][79][80][81][82] The local anodic oxidation is based on the phenomenon of electro-oxidation, which occurs when a negative polarity of the bias voltage is applied to the AFM probe (cathode) with respect to the polarity of the substrate (anode). [83][84][85][86] Thus, the geometric dimensions of the nanoscale oxide structures can be in situ controlled using the AFM control parameters.…”

“…Local anodic oxidation by atomic force microscope (AFM) was found promising for the prototyping of oxide nanoscale structures, demonstrating a stable effect of resistive switching without the necessity for electroforming. [ 78–82 ]…”

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

“…The principle of the neuromorphic system also turns out to be different in comparison with traditional computing systems, programming is replaced by learning, i.e., the neuromorphic system learns to solve problems [ 14 , 15 ]. The learning process itself consists in adjusting the weighting coefficients of neurons, which ensures high noise immunity and fault tolerance in solving a number of problems related to pattern recognition, adaptive control, forecasting, and diagnostics, the solution of which takes an order of magnitude longer on traditional computing systems [ 16 , 17 , 18 ]. Moreover, the result of the neuromorphic system’s work is weakly dependent on the malfunction of an individual neuron.…”