Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

Abstract

In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA0.75MA0.25)1-xCsxPbI3 (x = 0–0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic–inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FA0.75MA0.25PbI3. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FA0.75MA0.25PbI3, forming a high quality tri-cation perovskite film with a smooth, uniform, stable and robust crystalline grain structure. The resistive switching on/off ratio of the (FA0.75MA0.25)0.95Cs0.05PbI3 device is greater than 103 owing to the improved thin-film quality. Moreover, for the 5% CsI doped FA0.75MA0.25PbI3 films, the endurance and the stability of retention are better than the non-doped film. The improved microstructure and memory properties are attributed to the balance stress of FA/MA/Cs with different ionic size. It suggests the potential to achieve a desired resistive memory property of tri-cationic perovskite by carefully adjusting the cation ratios.

Probing Pathways of Conductive Filaments of FAMAPbI3 with Controlled FA Composition Using Conductive Atomic Force Microscopy

“…Moreover, a recent study revealed that V I is located in GBs within the perovskite film, which is consistent with our C-AFM results. Furthermore, several theoretical and experimental studies have shown that perovskite GBs serve as channels for ion migration. ,, Therefore, we believe that it is possible to migrate to the anode/Au interface under an applied bias with I – ions, which can generate V I along GBs in the perovskite film. However, we did not observe memory characteristics in FA-rich FAMAPbI 3 .…”

“…However, when the applied voltage was further increased to 0.97 V, the current in the device abruptly increased from 10 –3 to 10 –1 A. This sweep represents the region in which the resistance switched from the HRS to the low-resistance state (LRS) . This clearly indicates that the FAMAPbI 3 device switches from the off state to the on state.…”

“…32 showed a gradual increase in current from 10 –6 to 10 –3 A. This region was characterized by the high-resistance state (HRS) of the memory device characteristics . However, when the applied voltage was further increased to 0.97 V, the current in the device abruptly increased from 10 –3 to 10 –1 A.…”

CsBr Immersion for Organic–Inorganic Hybrid Perovskite-Based Memristors: Controllable Grain, Poole–Frenkel Emission, and Electrical Properties

“…However, the PL peak of CsBr-15s is close to that of CsBr-10s due to the needle-like structure of part of the other phase. The PL is sensitive to defects in OIHP films, and higher peak intensities are associated with fewer defects . In addition, when the post-treatment process of ionic modification was applied on the MAPbI 3 film surface, the trap states on the perovskite film surface were passivated, and the energy band structure was altered compared to that of the OIHP film without interfacial modification. ,, Figure d presents the ultraviolet–visible (UV–vis) absorption spectra of MAPbI 3 with and without the post-treatment process, with all of the samples of the OIHP showing similar identical absorption edges in the 400–800 nm range.…”

Low-voltage, solution-processed, two-terminal organic bistable memory device

“…The organic materials have potential aspirant for future device applications. 1,2 For example, light-emitting diodes, [3][4][5][6] transistors, [7][8][9][10] photo voltaic cells, [11][12][13][14][15] and switches, [16][17][18][19][20] have been realized. However, one of the important electronic devices is memory which will provide or store the information for logic operation.…”