We have successfully fabricated 200 -500 nm thick highly c-axis oriented (Hg, Re)-1223 and (Hg, M)-1212 (M = Re, MO) thin films on SrTiOs (100) substrates by using HgO/M-Ba-Ca-Cu-0 multilayer precursor films prepared by pulsed laser deposition. Their electrical transport properties in magnetic fields less than 7 T are investigated using 5 -50 pm wide bridges patterned by means of electron-beam lithography and ion milling without using water. The (Hg, Re)-1223 film exhibits a T, (zero) of 127.5 K and a J , value at 77 K of 1.5 and 0.2 x lo6 A/cm2 in a self-field and 1 T field, respectively. Higher J , values below 100 K are observed for (Hg, M)-1212 (M = Re, MO) films with better crystallinity and surface morphology than the 1223 film in spite of their lower T, (zero) of 115-122 K. The (Hg, Re)-1212 film exhibits the highest J, values of 5, 1.5, and 0.4 x lo6 A/cm2at 77 and 100 K in a self-field and at 77 K in 1 T field, respectively. The irreversibility field above 77 K evaluated from the resistive transitions of these films is found to be substantially higher than those for undoped Hg-1212 and T1-1223 thin films.