Resistivity and carrier lifetime in gold-doped silicon

A FORTRAN program for calculating the electrical parameters of extrinsic silicon

“…These assumptions are appropriate for impurities from column 3 and 5 of the periodic table (e.g., boron and phosphorus) and may, or may not, be appropriate for other impurities with larger activation energies or multiple energy levels.…”

“…Variations of the present program have proven useful for interpreting Hall data [1], predicting the electrical behavior when the dopant picture (e.g., compensation) is changed [2,3], determining the degree of ionization of the active dopant state in extrinsic infrared detectors [4] , and understanding the changing role of the various scattering mechanisms on mobility as the temperature or dopant density changes.…”

“…These properties are appropriate for the colximn 3 and column 5 impurities in the periodic table (e.g., boron and phosphorus) and may, or may not, be appropriate for other impurities with larger activation energies or multiple energy levels. Impurity states satisfying these criteria are called dopant states in this report and are characterized by the following three parameters which are specified on the input data cards for each state: 1. the concentration of the dopant state per unit volume of silicon, 2. the limiting activation energy at low concentrations relative to the appropriate band edge, and 3. the degeneracy of the dopant state (an integer larger than unity).…”

Irradiated Silicon for Microwave and Millimeter Wave Applications

“…Its presence in both n-and p-type low-doped silicon crystals contributes to a significant increase in resistivity. Early work on this topic is presented in [13], whereas extensive studies of gold-doped silicon crystals have been described in [14]. Krupka et al [2] have shown that gold doping of silicon increases resistivity 50 times from 2 to 100 kcm.…”