Resistivity and optical transmission of CuxS layers as a function of composition

Couve, S.; Gouskov, L.; Szepessy, L.; Vedel, J.; Castel, Egil D.

doi:10.1016/0040-6090(73)90046-1

Cited by 42 publications

(14 citation statements)

References 8 publications

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“…Cu x S is an interesting material for its semiconducting properties. Indeed, the variation in x, 1 x 2, can provide a range of distinct crystalline phases depending on the temperature [1,2], producing significant variation in the electrical conductivity [3] and optical band gap [4]. The Cu x S thin films have been found to possess near ideal solar control characteristics [5].…”

Section: Introductionmentioning

confidence: 99%

Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Allouche

Nasr

Guasch

et al. 2010

Comptes Rendus. Chimie

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Section: Introductionmentioning

confidence: 99%

Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Allouche

Nasr

Guasch

et al. 2010

Comptes Rendus. Chimie

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“…Five stable phases (chalcocite, Cu 2 S; djurleite, Cu 1.96 S; digenite, Cu 1.8 S; anilite, Cu 1.75 S; and covellite, CuS) are known to exist at room temperature range, but there are additionally Cu x S mixed phases in the intermediate 1< × <2. Resistivity values vary from ρ~10 Ω cm to ρ~10 − 4 Ω cm for x varying between 2 and 1; the optical band gap of the material highly depends as well on x [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

CuS-based thin films for architectural glazing applications produced by co-evaporation: Morphology, optical and electrical properties

Bollero

Grossberg

Asenjo

et al. 2009

Surface and Coatings Technology

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“…The CVD process was chosen over PCVD because a larger range of film thicknesses could be covered due to the higher film growth rate of CVD. 12,20 PCVD films deposited in the porous TiO 2 matrix had sheet resistances that were too high to measure. Also, CVD film could be deposited directly on glass, which simplified the sheet resistance and optical absorption measurements.…”

Section: B Cvd Resultsmentioning

confidence: 99%

Pulsed chemical vapor deposition of Cu2S into a porous TiO2 matrix

Carbone¹,

Zhou²,

Vollbrecht³

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Experimental and theoretical investigation of the electronic structure of Cu2O and CuO thin films on Cu(110) using x-ray photoelectron and absorption spectroscopy Chalcocite (Cu 2 S) has been deposited via pulsed chemical vapor deposition (PCVD) into a porous TiO 2 matrix using hydrogen sulfide and a metal-organic precursor. The precursor used is similar to the more common Cu(hfac)(tmvs) precursor, but it is fluorine free and exhibits increased thermal stability. The simultaneous exposure of the substrate to the copper precursor and hydrogen sulfide resulted in nonuniform Cu 2 S films with a temperature independent deposition rate implying gas phase reaction kinetics. The exposure of mesoporous TiO 2 and planar ZnO to alternating cycles of the copper precursor and hydrogen sulfide resulted in a PCVD film that penetrated fully into the porous TiO 2 layer with a constant deposition rate of 0.08 nm/cycle over a temperature range of 150-400 C. The chalcocite (Cu 2 S) stoichiometry was confirmed with extended x-ray absorption fine structure measurements (EXAFS) and x-ray photoelectron spectroscopy. Calculations of the EXAFS spectrum for different Cu x S phases show that EXAFS is sensitive to the different phase stoichiometries. Optical absorption measurements of CVD thin films using photothermal deflection spectroscopy show the presence of a metallic copper-poor phase for gas phase nucleated films less than 100 nm thick and a copper-rich semiconducting phase for thicknesses greater than 100 nm with a direct band gap of 1.8 eV and an indirect bandgap of 1.2 eV.

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Resistivity and optical transmission of CuxS layers as a function of composition

Cited by 42 publications

References 8 publications

Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

CuS-based thin films for architectural glazing applications produced by co-evaporation: Morphology, optical and electrical properties

Pulsed chemical vapor deposition of Cu2S into a porous TiO2 matrix

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